Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPy epilayer

Hao Xie; Hongyu Lin; Yang Wang; Hongbo Lu; Yan Sun; Jiaming Hao; Shuhong Hu; Ning Dai

doi:10.1088/2053-1591/ab2434

Liquid phase epitaxy growth and photoluminescence of InAs_1-x-ySb_xP_y epilayer

Hao Xie
, Hongyu Lin
, Yang Wang
, Hongbo Lu
, Yan Sun
, Jiaming Hao
, Shuhong Hu^*
, Ning Dai

^*此作品的通讯作者

University of Chinese Academy of Sciences
CAS - Shanghai Institute of Technical Physics

科研成果: 期刊稿件 › 文章 › 同行评审

1 引用（Scopus）

摘要

An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs_1-x-ySb_xP_y epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs_1-x-ySb_xP_y epilayer. InAs_1-x-ySb_xP_y alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.

源语言	英语
文章编号	085912
期刊	Materials Research Express
卷	6
期	8
DOI	https://doi.org/10.1088/2053-1591/ab2434
出版状态	已出版 - 31 5月 2019
已对外发布	是

访问文件

10.1088/2053-1591/ab2434

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{d33d3bc76bdb46f185cd0ccc26254f8d,

title = "Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPy epilayer",

abstract = "An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.",

keywords = "Room temperature photoluminescence, high resolution x-ray diffraction, liquid phase epitaxy, semiconducting quaternary compounds",

author = "Hao Xie and Hongyu Lin and Yang Wang and Hongbo Lu and Yan Sun and Jiaming Hao and Shuhong Hu and Ning Dai",

note = "Publisher Copyright: {\textcopyright} 2019 IOP Publishing Ltd.",

year = "2019",

month = may,

day = "31",

doi = "10.1088/2053-1591/ab2434",

language = "英语",

volume = "6",

journal = "Materials Research Express",

issn = "2053-1591",

publisher = "IOP Publishing Ltd.",

number = "8",

}

TY - JOUR

T1 - Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPy epilayer

AU - Xie, Hao

AU - Lin, Hongyu

AU - Wang, Yang

AU - Lu, Hongbo

AU - Sun, Yan

AU - Hao, Jiaming

AU - Hu, Shuhong

AU - Dai, Ning

PY - 2019/5/31

Y1 - 2019/5/31

N2 - An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.

AB - An investigation was made into the liquid phase epitaxy growth and photoluminescence properties of InAs1-x-ySbxPy epilayers. Details of the growth conditions and x-ray analysis were given, together with photoluminescence (PL) spectra measured at room temperature (RT). RT PL results indicate the good optical quality of InAs1-x-ySbxPy epilayer. InAs1-x-ySbxPy alloy with P content of 0.27 has a band gap of 0.48 eV that could be suitable for barrier layer in device grown by LPE.

KW - Room temperature photoluminescence

KW - high resolution x-ray diffraction

KW - liquid phase epitaxy

KW - semiconducting quaternary compounds

UR - https://www.scopus.com/pages/publications/85069527707

U2 - 10.1088/2053-1591/ab2434

DO - 10.1088/2053-1591/ab2434

M3 - 文章

AN - SCOPUS:85069527707

SN - 2053-1591

VL - 6

JO - Materials Research Express

JF - Materials Research Express

IS - 8

M1 - 085912

ER -

Liquid phase epitaxy growth and photoluminescence of InAs1-x-ySbxPy epilayer

摘要

访问文件

其它文件与链接

学术指纹

引用此

Liquid phase epitaxy growth and photoluminescence of InAs_1-x-ySb_xP_y epilayer