@inproceedings{a3f0964adb4c484c9efce720f7bd4e73,
title = "Lateral p-n Homojunction formed by Local Doping for High-Performance Photodetector",
abstract = "A novel and non-degenerate doping strategy for 2D transition metal dichalcogenides is proposed to form a lateral p-n junction in the application of optoelectronics. A high rectification ratio of 103 indicates that a high-quality WSe2 p-n junction is formed through Cetyltrimethyl Ammonium Bromide doping. The device shows superior photo-responsivity of 42.02 A/W, a specific detectivity of 1011Jones, I light\}\}/I dark\} of 103 under light illumination, demonstrating its promising applications for high-sensitive photo detector and low-power photo electronic devices.",
keywords = "charge transfer, lateral p-n junction, photodetector, transition metal dichalcogenide",
author = "Jiacheng Sun and Junying Zhang and Yuyan Wang",
note = "Publisher Copyright: {\textcopyright} 2021 IEEE.; 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021 ; Conference date: 08-04-2021 Through 11-04-2021",
year = "2021",
month = apr,
day = "8",
doi = "10.1109/EDTM50988.2021.9420909",
language = "英语",
series = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2021 5th IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2021",
address = "美国",
}