Lateral ordered InGaAs self-organized quantum dots grown on (311) GaAs by conventional molecular beam epitaxy

Self-assembled In_{cursive Greek chi} Ga_{1-cursive Greek Chi} As quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of In_{cursive Greek Chi} Ga_{1-cursive Greek chi} As QDs with lower In content around 0.3 has been observed on As-terminated (D type) surfaces. The direction of alignment orientation of the QDs formation differs from the direction of misorientation of the (311) D surface, and is strongly dependent upon the In content _{cursive Greek chi}. The ordering alignment becomes significantly deteriorated as the In content is increased to above 0.5 or as the QDs are formed on (100) and (311) Ga-terminated (A type) substrates.