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Laser-induced nanoscale thermocapillary flow for purification of aligned arrays of single-walled carbon nanotubes

  • Frank Du
  • , Jonathan R. Felts
  • , Xu Xie
  • , Jizhou Song
  • , Yuhang Li
  • , Matthew R. Rosenberger
  • , Ahmad E. Islam
  • , Sun Hun Jin
  • , Simon N. Dunham
  • , Chenxi Zhang
  • , William L. Wilson
  • , Yonggang Huang
  • , William P. King
  • , John A. Rogers*
  • *此作品的通讯作者
  • University of Illinois at Urbana-Champaign
  • Texas A&M University
  • Zhejiang University
  • Incheon National University
  • University of Miami
  • Northwestern University

科研成果: 期刊稿件文章同行评审

摘要

Although aligned arrays of single-walled carbon nanotubes (SWNTs) have outstanding potential for use in broad classes of advanced semiconductor devices, the relatively large population of metallic SWNTs (m-SWNTs) that results from conventional growth techniques leads to significantly degraded performance. Recently reported methods based on thermocapillary effects that enable removal of m-SWNTs from such arrays offer exceptional levels of efficiency, but the procedures are cumbersome and require multiple processing steps. Here we present a simple, robust alternative that yields pristine arrays of purely semiconducting SWNTs (s-SWNTs) by use of irradiation with an infrared laser. Selective absorption by m-SWNTs coated with a thin organic film initiates nanoscale thermocapillary flows that lead to exposure only of the m-SWNTs. Reactive ion etching eliminates the m-SWNTs without damaging the s-SWNTs; removal of the film completes the purification. Systematic experimental studies and computational modeling of the thermal physics illuminates the essential aspects of this process. Demonstrations include use of arrays of s-SWNTs formed in this manner as semiconducting channel materials in statistically relevant numbers of transistors to achieve both high mobilities (>900 cm2 V-1 s-1) and switching ratios (>104). Statistical analysis indicates that the arrays contain at least 99.8% s-SWNTs and likely significantly higher.

源语言英语
页(从-至)12641-12649
页数9
期刊ACS Nano
8
12
DOI
出版状态已出版 - 23 12月 2014

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