Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability

Lezhi Wang; Kewen Shi; Shouzhong Peng; Kaihua Cao; Huaiwen Yang; Jianfeng Gao; Weisheng Zhao; Chao Zhao

doi:10.7567/1347-4065/ab0e32

Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability

Lezhi Wang
, Kewen Shi
, Shouzhong Peng
, Kaihua Cao
, Huaiwen Yang
, Jianfeng Gao
, Weisheng Zhao
, Chao Zhao

集成电路科学与工程学院

Beihang University
CAS - Institute of Microelectronics

科研成果: 期刊稿件 › 文章 › 同行评审

8 引用（Scopus）

摘要

We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin-orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.

源语言	英语
文章编号	050903
期刊	Japanese Journal of Applied Physics
卷	58
期	5
DOI	https://doi.org/10.7567/1347-4065/ab0e32
出版状态	已出版 - 2019

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title = "Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability",

abstract = "We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin-orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.",

author = "Lezhi Wang and Kewen Shi and Shouzhong Peng and Kaihua Cao and Huaiwen Yang and Jianfeng Gao and Weisheng Zhao and Chao Zhao",

note = "Publisher Copyright: {\textcopyright} 2019 The Japan Society of Applied Physics.",

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T1 - Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability

AU - Wang, Lezhi

AU - Shi, Kewen

AU - Peng, Shouzhong

AU - Cao, Kaihua

AU - Yang, Huaiwen

AU - Gao, Jianfeng

AU - Zhao, Weisheng

AU - Zhao, Chao

PY - 2019

Y1 - 2019

N2 - We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin-orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.

AB - We report a robust perpendicularly magnetized β-W/CoFeB/MgO multilayer structure. For the first time, we demonstrate efficient spin-orbit torque (SOT) switching and a highly thermally stable annealing process with this structure using X-ray diffraction tests, the harmonic technique, and SOT-driven magnetization switching measurements. These results may enable applications of SOT-based magnetic random access memory, which is required for integration in the CMOS back-end-of-line process.

UR - https://www.scopus.com/pages/publications/85067449745

U2 - 10.7567/1347-4065/ab0e32

DO - 10.7567/1347-4065/ab0e32

M3 - 文章

AN - SCOPUS:85067449745

SN - 0021-4922

VL - 58

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 5

M1 - 050903

ER -

Large spin Hall effect of perpendicularly magnetized β-W/CoFeB/MgO layers with high thermal stability

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