TY - JOUR
T1 - Interplay of charge carrier and antiferromagnetic order in metallic triangular lattice GdZn3P3
AU - Guo, Jiesen
AU - Yang, Fan
AU - He, Yuzhou
AU - Liu, Xinyang
AU - Deng, Zheng
AU - Zhang, Qinghua
AU - Wang, Xiancheng
AU - Sheng, Xianlei
AU - Li, Wei
AU - Jin, Changqing
AU - Zhao, Kan
N1 - Publisher Copyright:
© 2026, American Physical Society.
PY - 2026/1
Y1 - 2026/1
N2 - We investigate a hexagonal ScAl3C3-type antiferromagnet GdZn3P3 single crystal. Compared with antiferromagnetic topological material EuM2X2 (M = Zn, Cd; X = P, As), the GdZn3P3 features an additional ZnP 3 trigonal planar units. Notably, single-crystal x-ray diffraction analysis reveals that Zn and P atoms within a trigonal planar layer exhibit significant anisotropic displacement parameters with space group P63/mmc. Meanwhile, a scanning transmission electron microscopy experiment demonstrates the presence of interstitial P atoms above and below the ZnP honeycomb lattice, suggesting potential ZnP bond instability within the ZnP3 trigonal layers. Concerning the triangular Gd 3+ layer, the magnetic susceptibility χ (T) and heat capacity measurements reveal an A-type antiferromagnetic order at TN = 4.5 K. Below TN, the in-plane χ (T) is nearly 4 times the χ (T) along c axis, indicative of strong magnetic anisotropy for salt-flux-grown GdZn3P3 crystal. The density function theory calculation shows that GdZn3P3 is an indirect semiconductor with a band gap 0.27 eV, supported by the resistivity measurement on the polycrystal sample. Interestingly, Hall measurements of metallic GdZn3P3 crystals grown via salt flux reveal a low concentration of hole carriers, consistent with the previously mentioned presence of interstitial P atoms. Furthermore, these crystals exhibit a pronounced nonlinear anomalous Hall effect below TN. In contrast, GdZn3P3 crystals grown by chemical vapor transport display weak semiconducting behavior. Despite exhibiting a similar TN, the in-plane χ (T) below TN in the vapor-transport-grown crystal is approximately half in magnitude compared to that of the salt-flux-grown sample, which supports the hypothesis of charge carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions. These findings collectively establish GdZn3P3 as a compelling model system for investigating the coupling between charge carriers and triangular lattice magnetism within a two-dimensional framework.
AB - We investigate a hexagonal ScAl3C3-type antiferromagnet GdZn3P3 single crystal. Compared with antiferromagnetic topological material EuM2X2 (M = Zn, Cd; X = P, As), the GdZn3P3 features an additional ZnP 3 trigonal planar units. Notably, single-crystal x-ray diffraction analysis reveals that Zn and P atoms within a trigonal planar layer exhibit significant anisotropic displacement parameters with space group P63/mmc. Meanwhile, a scanning transmission electron microscopy experiment demonstrates the presence of interstitial P atoms above and below the ZnP honeycomb lattice, suggesting potential ZnP bond instability within the ZnP3 trigonal layers. Concerning the triangular Gd 3+ layer, the magnetic susceptibility χ (T) and heat capacity measurements reveal an A-type antiferromagnetic order at TN = 4.5 K. Below TN, the in-plane χ (T) is nearly 4 times the χ (T) along c axis, indicative of strong magnetic anisotropy for salt-flux-grown GdZn3P3 crystal. The density function theory calculation shows that GdZn3P3 is an indirect semiconductor with a band gap 0.27 eV, supported by the resistivity measurement on the polycrystal sample. Interestingly, Hall measurements of metallic GdZn3P3 crystals grown via salt flux reveal a low concentration of hole carriers, consistent with the previously mentioned presence of interstitial P atoms. Furthermore, these crystals exhibit a pronounced nonlinear anomalous Hall effect below TN. In contrast, GdZn3P3 crystals grown by chemical vapor transport display weak semiconducting behavior. Despite exhibiting a similar TN, the in-plane χ (T) below TN in the vapor-transport-grown crystal is approximately half in magnitude compared to that of the salt-flux-grown sample, which supports the hypothesis of charge carrier-mediated Ruderman-Kittel-Kasuya-Yosida interactions. These findings collectively establish GdZn3P3 as a compelling model system for investigating the coupling between charge carriers and triangular lattice magnetism within a two-dimensional framework.
UR - https://www.scopus.com/pages/publications/105038126453
U2 - 10.1103/QFBT-XN97
DO - 10.1103/QFBT-XN97
M3 - 文章
AN - SCOPUS:105038126453
SN - 2469-9950
VL - 113
SP - 1
EP - 13
JO - Physical Review B
JF - Physical Review B
IS - 8
M1 - 085147
ER -