Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films

Yinyue Wang; Huaizhe Xu

doi:10.1016/S0040-6090(97)00033-3

Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films

Yinyue Wang^*
, Huaizhe Xu

^*此作品的通讯作者

Lanzhou University
University of Science and Technology of China

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

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In this paper, the interface vibrational spectrum in a reactive-sputtering a-Si:H/a-Ge:H multilayer was investigated using IR transmission and Raman scattering. It is shown that excess deformation is not found near the interface and there is no evidence for excess hydrogen at the a-Si:H/a-Ge:H interface. The thermal stability of a-Si:H/a-Ge:H multilayer films was also studied by using IR and X-ray diffraction spectra. It was found that the crystallization temperature of a multilayer with small layer thickness is higher than that of bulk a-Ge:H.

源语言	英语
页（从-至）	10-13
页数	4
期刊	Thin Solid Films
卷	299
期	1-2
DOI	https://doi.org/10.1016/S0040-6090(97)00033-3
出版状态	已出版 - 15 5月 1997
已对外发布	是

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title = "Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films",

abstract = "In this paper, the interface vibrational spectrum in a reactive-sputtering a-Si:H/a-Ge:H multilayer was investigated using IR transmission and Raman scattering. It is shown that excess deformation is not found near the interface and there is no evidence for excess hydrogen at the a-Si:H/a-Ge:H interface. The thermal stability of a-Si:H/a-Ge:H multilayer films was also studied by using IR and X-ray diffraction spectra. It was found that the crystallization temperature of a multilayer with small layer thickness is higher than that of bulk a-Ge:H.",

keywords = "Amorphous materials, Crystallization, Interfaces, Multilayers",

author = "Yinyue Wang and Huaizhe Xu",

year = "1997",

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day = "15",

doi = "10.1016/S0040-6090(97)00033-3",

language = "英语",

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T1 - Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films

AU - Wang, Yinyue

AU - Xu, Huaizhe

PY - 1997/5/15

Y1 - 1997/5/15

N2 - In this paper, the interface vibrational spectrum in a reactive-sputtering a-Si:H/a-Ge:H multilayer was investigated using IR transmission and Raman scattering. It is shown that excess deformation is not found near the interface and there is no evidence for excess hydrogen at the a-Si:H/a-Ge:H interface. The thermal stability of a-Si:H/a-Ge:H multilayer films was also studied by using IR and X-ray diffraction spectra. It was found that the crystallization temperature of a multilayer with small layer thickness is higher than that of bulk a-Ge:H.

AB - In this paper, the interface vibrational spectrum in a reactive-sputtering a-Si:H/a-Ge:H multilayer was investigated using IR transmission and Raman scattering. It is shown that excess deformation is not found near the interface and there is no evidence for excess hydrogen at the a-Si:H/a-Ge:H interface. The thermal stability of a-Si:H/a-Ge:H multilayer films was also studied by using IR and X-ray diffraction spectra. It was found that the crystallization temperature of a multilayer with small layer thickness is higher than that of bulk a-Ge:H.

KW - Amorphous materials

KW - Crystallization

KW - Interfaces

KW - Multilayers

UR - https://www.scopus.com/pages/publications/0031131084

U2 - 10.1016/S0040-6090(97)00033-3

DO - 10.1016/S0040-6090(97)00033-3

M3 - 文章

AN - SCOPUS:0031131084

SN - 0040-6090

VL - 299

SP - 10

EP - 13

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1-2

ER -

Interface vibrational spectrum investigation on reactively-sputtered a-Si:H/a-Ge:H multilayer films

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