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Interface atomic-scale structure and its impact on quantum electron transport

  • Zhongchang Wang*
  • , Mitsuhiro Saito
  • , Susumu Tsukimoto
  • , Yuichi Ikuhara
  • *此作品的通讯作者
  • Tohoku University
  • The University of Tokyo

科研成果: 期刊稿件文章同行评审

摘要

Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.

源语言英语
页(从-至)4966-4969
页数4
期刊Advanced Materials
21
48
DOI
出版状态已出版 - 28 12月 2009
已对外发布

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