摘要
Local structure, chemistry, and bonding at interfaces often radically affect the properties of materials. A combination of scanning transmission electron microscopy and density functional theory calculations reveals an atomic layer of carbon at a SiC/ Ti3SiC2 interface in Ohmic contact to p-type SiC (see image), which results in stronger adhesion, a lowered Schottky barrier, and enhanced transport. This is a key factor to understanding the origin of the Ohmic nature.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 4966-4969 |
| 页数 | 4 |
| 期刊 | Advanced Materials |
| 卷 | 21 |
| 期 | 48 |
| DOI | |
| 出版状态 | 已出版 - 28 12月 2009 |
| 已对外发布 | 是 |
学术指纹
探究 'Interface atomic-scale structure and its impact on quantum electron transport' 的科研主题。它们共同构成独一无二的学术指纹。引用此
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