Interface-assisted magnetoresistance behavior for ultrathin NiFe films

Shao Long Jiang; Xi Chen; Kang Yang; Gang Han; Jiao Teng; Xu Jing Li; Guang Yang; Qian Qian Liu; Yi Wei Liu; Lei Ding; Guang Hua Yu

doi:10.1016/j.jmmm.2015.05.050

Interface-assisted magnetoresistance behavior for ultrathin NiFe films

Shao Long Jiang
, Xi Chen
, Kang Yang
, Gang Han
, Jiao Teng
, Xu Jing Li
, Guang Yang
, Qian Qian Liu
, Yi Wei Liu
, Lei Ding
, Guang Hua Yu^*

^*此作品的通讯作者

University of Science and Technology Beijing
Hainan University

科研成果: 期刊稿件 › 文章 › 同行评审

5 引用（Scopus）

摘要

Abstract Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer.

源语言	英语
期刊论文编号	60226
页（从-至）	419-422
页数	4
期刊	Journal of Magnetism and Magnetic Materials
卷	393
DOI	https://doi.org/10.1016/j.jmmm.2015.05.050
出版状态	已出版 - 16 6月 2015
已对外发布	是

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@article{b83b4e7056f8482aa44023e230dcec57,

title = "Interface-assisted magnetoresistance behavior for ultrathin NiFe films",

abstract = "Abstract Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31\% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer.",

keywords = "Crystallization, Interface chemical states, Magnetoresistance behavior, NiFe film",

author = "Jiang, \{Shao Long\} and Xi Chen and Kang Yang and Gang Han and Jiao Teng and Li, \{Xu Jing\} and Guang Yang and Liu, \{Qian Qian\} and Liu, \{Yi Wei\} and Lei Ding and Yu, \{Guang Hua\}",

note = "Publisher Copyright: {\textcopyright} 2015 Elsevier B.V.",

year = "2015",

month = jun,

day = "16",

doi = "10.1016/j.jmmm.2015.05.050",

language = "英语",

volume = "393",

pages = "419--422",

journal = "Journal of Magnetism and Magnetic Materials",

issn = "0304-8853",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - Interface-assisted magnetoresistance behavior for ultrathin NiFe films

AU - Jiang, Shao Long

AU - Chen, Xi

AU - Yang, Kang

AU - Han, Gang

AU - Teng, Jiao

AU - Li, Xu Jing

AU - Yang, Guang

AU - Liu, Qian Qian

AU - Liu, Yi Wei

AU - Ding, Lei

AU - Yu, Guang Hua

PY - 2015/6/16

Y1 - 2015/6/16

N2 - Abstract Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer.

AB - Abstract Interface-assisted magnetoresistance (MR) behavior has been studied in Ta/MgO/NiFe/MgO/Ta multilayers by inserting a Mg metal layer between the NiFe layer and the top MgO layer. It is shown that MR ratio is about 31% larger than that in the films without Mg insertion. X-ray photoelectron spectroscopy and high resolution transmission electron microscope analyses show that the enhanced MR is primarily ascribed to effective control of chemical states at the NiFe/MgO interface and crystallization of the top MgO layer.

KW - Crystallization

KW - Interface chemical states

KW - Magnetoresistance behavior

KW - NiFe film

UR - https://www.scopus.com/pages/publications/84931266544

U2 - 10.1016/j.jmmm.2015.05.050

DO - 10.1016/j.jmmm.2015.05.050

M3 - 文章

AN - SCOPUS:84931266544

SN - 0304-8853

VL - 393

SP - 419

EP - 422

JO - Journal of Magnetism and Magnetic Materials

JF - Journal of Magnetism and Magnetic Materials

M1 - 60226

ER -

Interface-assisted magnetoresistance behavior for ultrathin NiFe films

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