Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan; David Bérardan; Lidong Zhao; Céline Barreteau; Nita Dragoe

doi:10.1063/1.4775593

Influence of Pb doping on the electrical transport properties of BiCuSeO

Lin Pan^*
, David Bérardan
, Lidong Zhao
, Céline Barreteau
, Nita Dragoe

^*此作品的通讯作者

Institut de Chimie Moléculaire et des Matériaux d'Orsay

科研成果: 期刊稿件 › 文章 › 同行评审

110 引用（Scopus）

摘要

The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi_1-xPb_xCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi_1- _xPb_xCuSeO (x = 0.03) reaches 5.3 μW cm^-1 K^-2 at 873 K. The influence of Pb²⁺ doping on the electronic structure is the same as the one obtained with Sr²⁺, however, the decrease of the holes mobility is reduced as compared to Sr ²⁺ doping, which could be beneficial to the thermoelectric performances.

源语言	英语
期刊论文编号	023902
期刊	Applied Physics Letters
卷	102
期	2
DOI	https://doi.org/10.1063/1.4775593
出版状态	已出版 - 14 1月 2013
已对外发布	是

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abstract = "The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.",

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AU - Pan, Lin

AU - Bérardan, David

AU - Zhao, Lidong

AU - Barreteau, Céline

AU - Dragoe, Nita

PY - 2013/1/14

Y1 - 2013/1/14

N2 - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

AB - The effect of Pb doping on the thermoelectric properties of p-type BiCuSeO from 25 K to 873 K has been studied. The electrical resistivity and Seebeck coefficient of Bi1-xPbxCuSeO both decreased monotonically in all temperature range with increasing Pb content due to the increased carrier concentration. The power factor of Bi1- xPbxCuSeO (x = 0.03) reaches 5.3 μW cm-1 K-2 at 873 K. The influence of Pb2+ doping on the electronic structure is the same as the one obtained with Sr2+, however, the decrease of the holes mobility is reduced as compared to Sr 2+ doping, which could be beneficial to the thermoelectric performances.

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JO - Applied Physics Letters

JF - Applied Physics Letters

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Influence of Pb doping on the electrical transport properties of BiCuSeO

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