In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

Chao Zhang; Mariya Neklyudova; Liang Fang; Qiang Xu; Hui Wang; Frans D. Tichelaar; Henny W. Zandbergen

doi:10.1088/0957-4484/26/15/155703

In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

Chao Zhang
, Mariya Neklyudova
, Liang Fang
, Qiang Xu
, Hui Wang
, Frans D. Tichelaar
, Henny W. Zandbergen

材料科学与工程学院

National University of Defense Technology
Delft University of Technology
DENSsolutions B.V.

科研成果: 期刊稿件 › 文章 › 同行评审

4 引用（Scopus）

摘要

The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10^-2 Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10⁶ A cm^-2 in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

源语言	英语
文章编号	155703
期刊	Nanotechnology
卷	26
期	15
DOI	https://doi.org/10.1088/0957-4484/26/15/155703
出版状态	已出版 - 22 4月 2015

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abstract = "The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10-2 Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 106 A cm-2 in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.",

keywords = "electrical breakdown, in situ, nanowire, transmission electron microscope",

author = "Chao Zhang and Mariya Neklyudova and Liang Fang and Qiang Xu and Hui Wang and Tichelaar, \{Frans D.\} and Zandbergen, \{Henny W.\}",

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T1 - In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

AU - Zhang, Chao

AU - Neklyudova, Mariya

AU - Fang, Liang

AU - Xu, Qiang

AU - Wang, Hui

AU - Tichelaar, Frans D.

AU - Zandbergen, Henny W.

PY - 2015/4/22

Y1 - 2015/4/22

N2 - The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10-2 Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 106 A cm-2 in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

AB - The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (∼10-2 Ω · cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 106 A cm-2 in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

KW - electrical breakdown

KW - in situ

KW - nanowire

KW - transmission electron microscope

UR - https://www.scopus.com/pages/publications/84925423328

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DO - 10.1088/0957-4484/26/15/155703

M3 - 文章

AN - SCOPUS:84925423328

SN - 0957-4484

VL - 26

JO - Nanotechnology

JF - Nanotechnology

IS - 15

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ER -

In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

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