In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells

Johnpaul K. Pious; Huagui Lai; Juntao Hu; Deying Luo; Evgeniia Gilshtein; Severin Siegrist; Radha K. Kothandaraman; Zheng Hong Lu; Christian M. Wolff; Ayodhya N. Tiwari; Fan Fu

doi:10.1021/acsami.4c07083

In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells

Johnpaul K. Pious
, Huagui Lai
, Juntao Hu
, Deying Luo
, Evgeniia Gilshtein
, Severin Siegrist
, Radha K. Kothandaraman
, Zheng Hong Lu
, Christian M. Wolff
, Ayodhya N. Tiwari
, Fan Fu^*

^*此作品的通讯作者

Swiss Federal Laboratories for Materials Science and Technology (Empa)
Yunnan University
University of Toronto
Swiss Federal Institute of Technology Lausanne

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (W_F) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA_0.6MA_0.4Pb_0.4Sn_0.6I₃)/HTL bottom interface. The W_F of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive V_OC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA_0.6MA_0.4Pb_0.4Sn_0.6I₃ PSCs with 18.3% efficiency and an exceptionally high V_OC of 0.845 V.

源语言	英语
页（从-至）	39399-39407
页数	9
期刊	ACS Applied Materials and Interfaces
卷	16
期	30
DOI	https://doi.org/10.1021/acsami.4c07083
出版状态	已出版 - 31 7月 2024
已对外发布	是

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title = "In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells",

abstract = "High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (WF) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The WF of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5\% efficiency and an impressive VOC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3\% efficiency and an exceptionally high VOC of 0.845 V.",

keywords = "2-fluoro benzylammonium iodide additive, blade-coating, buried interface, low bandgap Pb−Sn perovskites, perovskite solar cell upscaling",

author = "\{K. Pious\}, Johnpaul and Huagui Lai and Juntao Hu and Deying Luo and Evgeniia Gilshtein and Severin Siegrist and Kothandaraman, \{Radha K.\} and Lu, \{Zheng Hong\} and Wolff, \{Christian M.\} and Tiwari, \{Ayodhya N.\} and Fan Fu",

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doi = "10.1021/acsami.4c07083",

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T1 - In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells

AU - K. Pious, Johnpaul

AU - Lai, Huagui

AU - Hu, Juntao

AU - Luo, Deying

AU - Gilshtein, Evgeniia

AU - Siegrist, Severin

AU - Kothandaraman, Radha K.

AU - Lu, Zheng Hong

AU - Wolff, Christian M.

AU - Tiwari, Ayodhya N.

AU - Fu, Fan

PY - 2024/7/31

Y1 - 2024/7/31

N2 - High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (WF) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The WF of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive VOC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3% efficiency and an exceptionally high VOC of 0.845 V.

AB - High-efficiency Pb-Sn narrow-bandgap perovskite solar cells (PSCs) heavily rely on PEDOT:PSS as the hole-transport layer (HTL) owing to its excellent electrical conductivity, dopant-free nature, and facile solution processability. However, the shallow work function (WF) of PEDOT:PSS consequently results in severe minority carrier recombination at the perovskite/HTL interface. Here, we tackle this issue by an in situ interface engineering strategy using a new molecule called 2-fluoro benzylammonium iodide (FBI) that suppresses nonradiative recombination near the Pb-Sn perovskite (FA0.6MA0.4Pb0.4Sn0.6I3)/HTL bottom interface. The WF of PEDOT:PSS increases by 0.1 eV with FBI modification, resulting in Pb-Sn PSCs with 20.5% efficiency and an impressive VOC of 0.843 V. Finally, we have successfully transferred our in situ buried interface modification strategy to fabricate blade-coated FA0.6MA0.4Pb0.4Sn0.6I3 PSCs with 18.3% efficiency and an exceptionally high VOC of 0.845 V.

KW - 2-fluoro benzylammonium iodide additive

KW - blade-coating

KW - buried interface

KW - low bandgap Pb−Sn perovskites

KW - perovskite solar cell upscaling

UR - https://www.scopus.com/pages/publications/85199027078

U2 - 10.1021/acsami.4c07083

DO - 10.1021/acsami.4c07083

M3 - 文章

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AN - SCOPUS:85199027078

SN - 1944-8244

VL - 16

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EP - 39407

JO - ACS Applied Materials and Interfaces

JF - ACS Applied Materials and Interfaces

IS - 30

ER -

In Situ Buried Interface Engineering towards Printable Pb-Sn Perovskite Solar Cells

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