TY - JOUR
T1 - In-Plane Optical Anisotropy of Low-Symmetry 2D GeSe
AU - Yang, Yusi
AU - Liu, Shun Chang
AU - Wang, Yang
AU - Long, Mingsheng
AU - Dai, Chen Min
AU - Chen, Shiyou
AU - Zhang, Bo
AU - Sun, Zhe
AU - Sun, Zhaoyang
AU - Hu, Chunguang
AU - Zhang, Shishu
AU - Tong, Lianming
AU - Zhang, Gengmin
AU - Xue, Ding Jiang
AU - Hu, Jin Song
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2019/2/19
Y1 - 2019/2/19
N2 - As a new member of 2D materials, GeSe has attracted considerable attention recently due to its fascinating in-plane anisotropic vibrational, electrical, and optical properties originating from the low-symmetry crystal structure. Among these anisotropic properties, the anisotropic optical property, as a new degree of freedom to manipulate optoelectronic properties in 2D materials, is of great importance for practical applications. However, the fundamental understanding of the optical anisotropy of GeSe is still under exploration, severely restricting its utility in polarization-sensitive optical systems. Here, a systematic study about the in-plane optical anisotropy of GeSe is reported, including its anisotropic optical absorption, reflection, extinction, and refraction. The anisotropic band structure of GeSe is experimentally observed for the first time through angle-resolved photoemission spectroscopy, explaining the origin of the optical anisotropy. The anisotropic reflection and refraction of GeSe are further directly visualized through the angle-dependent optical contrast of GeSe flakes by azimuth-dependent reflectance difference microscopy and polarization-resolved optical microscopy, respectively. Finally, GeSe-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism. This study provides fundamental information for the optical anisotropy of GeSe, forcefully stimulating the exploration of novel GeSe-based optical and optoelectronic applications.
AB - As a new member of 2D materials, GeSe has attracted considerable attention recently due to its fascinating in-plane anisotropic vibrational, electrical, and optical properties originating from the low-symmetry crystal structure. Among these anisotropic properties, the anisotropic optical property, as a new degree of freedom to manipulate optoelectronic properties in 2D materials, is of great importance for practical applications. However, the fundamental understanding of the optical anisotropy of GeSe is still under exploration, severely restricting its utility in polarization-sensitive optical systems. Here, a systematic study about the in-plane optical anisotropy of GeSe is reported, including its anisotropic optical absorption, reflection, extinction, and refraction. The anisotropic band structure of GeSe is experimentally observed for the first time through angle-resolved photoemission spectroscopy, explaining the origin of the optical anisotropy. The anisotropic reflection and refraction of GeSe are further directly visualized through the angle-dependent optical contrast of GeSe flakes by azimuth-dependent reflectance difference microscopy and polarization-resolved optical microscopy, respectively. Finally, GeSe-based photodetectors exhibit a polarization-sensitive photoresponsivity due to the intrinsic linear dichroism. This study provides fundamental information for the optical anisotropy of GeSe, forcefully stimulating the exploration of novel GeSe-based optical and optoelectronic applications.
KW - angle-resolved photoemission spectroscopy
KW - azimuth-dependent reflectance difference microscopy
KW - birefringence
KW - germanium monoselenide
KW - polarization-resolved optical microscopy
UR - https://www.scopus.com/pages/publications/85057994595
U2 - 10.1002/adom.201801311
DO - 10.1002/adom.201801311
M3 - 文章
AN - SCOPUS:85057994595
SN - 2195-1071
VL - 7
JO - Advanced Optical Materials
JF - Advanced Optical Materials
IS - 4
M1 - 1801311
ER -