Improving the electrical conductivity of CuCrO                         2                          thin film by N doping

Guobo Dong; Ming Zhang; Xueping Zhao; Hui Yan; Chunyu Tian; Yonggang Ren

doi:10.1016/j.apsusc.2010.01.094

Improving the electrical conductivity of CuCrO ₂ thin film by N doping

Guobo Dong
, Ming Zhang^*
, Xueping Zhao
, Hui Yan
, Chunyu Tian
, Yonggang Ren

^*此作品的通讯作者

Beijing University of Technology
China North Nuclear Fuel Co. Ltd.

科研成果: 期刊稿件 › 文章 › 同行评审

46 引用（Scopus）

摘要

N-doped CuCrO ₂ thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO ₂ thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm ^-1 is achieved for the film deposited with 30 vol.% N ₂ O, which is about three orders of magnitude higher than that of the undoped CuCrO ₂ thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO ₂ thin films increase due to the Burstein-Moss shift.

源语言	英语
页（从-至）	4121-4124
页数	4
期刊	Applied Surface Science
卷	256
期	13
DOI	https://doi.org/10.1016/j.apsusc.2010.01.094
出版状态	已出版 - 15 4月 2010
已对外发布	是

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title = " Improving the electrical conductivity of CuCrO 2 thin film by N doping ",

abstract = " N-doped CuCrO 2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO 2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm -1 is achieved for the film deposited with 30 vol.\% N 2 O, which is about three orders of magnitude higher than that of the undoped CuCrO 2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO 2 thin films increase due to the Burstein-Moss shift.",

keywords = "Electronic properties, Optical properties",

author = "Guobo Dong and Ming Zhang and Xueping Zhao and Hui Yan and Chunyu Tian and Yonggang Ren",

year = "2010",

month = apr,

day = "15",

doi = "10.1016/j.apsusc.2010.01.094",

language = "英语",

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TY - JOUR

T1 - Improving the electrical conductivity of CuCrO 2 thin film by N doping

AU - Dong, Guobo

AU - Zhang, Ming

AU - Zhao, Xueping

AU - Yan, Hui

AU - Tian, Chunyu

AU - Ren, Yonggang

PY - 2010/4/15

Y1 - 2010/4/15

N2 - N-doped CuCrO 2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO 2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm -1 is achieved for the film deposited with 30 vol.% N 2 O, which is about three orders of magnitude higher than that of the undoped CuCrO 2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO 2 thin films increase due to the Burstein-Moss shift.

AB - N-doped CuCrO 2 thin films were prepared by using radio frequency magnetron sputtering technique. The XRD and XPS measurements were used to confirm the existence of the N acceptors in CuCrO 2 thin films. Hall measurements show the p-type conduction for all films. The electrical conductivity increases rapidly with the increase in N doping concentration, and the maximum of the electrical conductivity of 17 S cm -1 is achieved for the film deposited with 30 vol.% N 2 O, which is about three orders of magnitude higher than that of the undoped CuCrO 2 thin film. Upon increasing the doping concentrations the band gaps of N-doped CuCrO 2 thin films increase due to the Burstein-Moss shift.

KW - Electronic properties

KW - Optical properties

UR - https://www.scopus.com/pages/publications/77950517329

U2 - 10.1016/j.apsusc.2010.01.094

DO - 10.1016/j.apsusc.2010.01.094

M3 - 文章

AN - SCOPUS:77950517329

SN - 0169-4332

VL - 256

SP - 4121

EP - 4124

JO - Applied Surface Science

JF - Applied Surface Science

IS - 13

ER -

Improving the electrical conductivity of CuCrO 2 thin film by N doping

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Improving the electrical conductivity of CuCrO ₂ thin film by N doping