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Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation

  • A. P. Huang
  • , Z. F. Di
  • , Ricky K.Y. Fu
  • , Paul K. Chu*
  • *此作品的通讯作者
  • City University of Hong Kong

科研成果: 期刊稿件文章同行评审

摘要

We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO2 can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed.

源语言英语
页(从-至)8282-8285
页数4
期刊Surface and Coatings Technology
201
19-20 SPEC. ISS.
DOI
出版状态已出版 - 5 8月 2007
已对外发布

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