摘要
We investigate the microstructure and interfacial characteristics of nitrogen plasma-nitrided ZrO2 thin films deposited on p-type Si (100) wafers by cathodic arc deposition. The results show that the incorporation of a small amount of N into ZrO2 can improve the thermal stability of the thin films. High resolution transmission electron microscopy micrographs further confirm that the nitrided film remains amorphous and the interfacial layer has been essentially suppressed. The effects and underlying mechanism are discussed.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 8282-8285 |
| 页数 | 4 |
| 期刊 | Surface and Coatings Technology |
| 卷 | 201 |
| 期 | 19-20 SPEC. ISS. |
| DOI | |
| 出版状态 | 已出版 - 5 8月 2007 |
| 已对外发布 | 是 |
指纹
探究 'Improvement of interfacial and microstructure properties of high-k ZrO2 thin films fabricated by filtered cathodic arc deposition using nitrogen incorporation' 的科研主题。它们共同构成独一无二的指纹。引用此
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