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Imprinting of Local Metallic States into VO2 with Ultraviolet Light

  • Hai Tian Zhang
  • , Lu Guo
  • , Greg Stone
  • , Lei Zhang
  • , Yuan Xia Zheng
  • , Eugene Freeman
  • , Derek W. Keefer
  • , Subhasis Chaudhuri
  • , Hanjong Paik
  • , Jarrett A. Moyer
  • , Michael Barth
  • , Darrell G. Schlom
  • , John V. Badding
  • , Suman Datta
  • , Venkatraman Gopalan*
  • , Roman Engel-Herbert
  • *此作品的通讯作者
  • Pennsylvania State University
  • Cornell University
  • University of Illinois at Urbana-Champaign

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Materials exhibiting electronic phase transitions have attracted widespread attention. By switching between metallic and insulating states under external stimuli, the accompanying changes in the electrical and optical properties can be harnessed in novel electronic and optical applications. In this work, a laterally confined conductive pattern is inscribed into an otherwise insulating VO2 thin film using ultraviolet light, inducing an almost four orders of magnitude decrease in electrical resistivity of the exposed area. The metallic imprint remains in VO2 after ultraviolet light exposure and can be completely erased by a short low temperature anneal. The ability to optically pattern confined metallic structures provides new opportunities for reconfigurable photonic and plasmonic structures, as well as re-writable electric circuitry.

源语言英语
页(从-至)6612-6618
页数7
期刊Advanced Functional Materials
卷26
期36
DOI
出版状态已出版 - 26 9月 2016
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