摘要
Superior gas capture and detection performance play an important role in gas sensing materials. Effects of atomic vacancy defects on intrinsic properties of material are also not negligible. Here we firstly discuss gas adsorption behavior of defective 1T’ WS2 monolayer. We take toxic NO2 gas as an example to compare adsorption effects between defective and perfect 1T'WS2 monolayer. First-principles study based on density functional theory(DFT) is carried out to act as the theoretical basis. These results demonstrate vacancy defects could enhance adsorption stability of 1T’ WS2 monolayer, which provide lower adsorption energy, more charge transfer and more overlaps of density of states. Therefore, vacancy defects make 1T’ WS2 monolayer possess more outstanding surface activity and adsorption performance. This can also offer theoretical support for the improvement of nanomaterials applied in those high performance gas sensing devices.
| 源语言 | 英语 |
|---|---|
| 文章编号 | 111215 |
| 期刊 | Microelectronic Engineering |
| 卷 | 223 |
| DOI | |
| 出版状态 | 已出版 - 15 2月 2020 |
指纹
探究 'Highly enhanced performance for sensing by monolayer 1T’ WS2 with atomic vacancy' 的科研主题。它们共同构成独一无二的指纹。引用此
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