TY - GEN
T1 - High Q Dual Band Super High Frequency Notch Filter Based on Complementary Metamaterial
AU - Ul Haq, Tanveer
AU - Ruan, Cunjun
AU - Wang, Ruochen
AU - Wu, Tianyi
N1 - Publisher Copyright:
© 2018 The Institute of Electronics, Information and Communication Engineers (IEICE).
PY - 2018/12/31
Y1 - 2018/12/31
N2 - High Q dual band notch filters are vital constituent of modern microwave, mobile and satellite communication systems to enhance multiband operations. In this paper, resonant type metamaterial concept is used to design a high Q dual band super high frequency (SHF) notch filter. For this purpose, a multi-mode complementary metamaterial structure named complementary symmetric split ring resonator (CSSRR) is proposed. By simulation, fabrication and experiment, the resonance frequency of first notch is 5.35 GHz with attenuation level 62.08 dB, fractional bandwidth 36.07% and Q factor 267.5. While resonance frequency of second notch is 8.06 GHz with attenuation level 19.46 dB, fractional bandwidth 15.63% and Q factor 53.7. Proposed SHF notch filter has some unique features like small size, large stopband attenuation, wider bandwidth, and high Q factor.
AB - High Q dual band notch filters are vital constituent of modern microwave, mobile and satellite communication systems to enhance multiband operations. In this paper, resonant type metamaterial concept is used to design a high Q dual band super high frequency (SHF) notch filter. For this purpose, a multi-mode complementary metamaterial structure named complementary symmetric split ring resonator (CSSRR) is proposed. By simulation, fabrication and experiment, the resonance frequency of first notch is 5.35 GHz with attenuation level 62.08 dB, fractional bandwidth 36.07% and Q factor 267.5. While resonance frequency of second notch is 8.06 GHz with attenuation level 19.46 dB, fractional bandwidth 15.63% and Q factor 53.7. Proposed SHF notch filter has some unique features like small size, large stopband attenuation, wider bandwidth, and high Q factor.
UR - https://www.scopus.com/pages/publications/85060905279
U2 - 10.23919/PIERS.2018.8597696
DO - 10.23919/PIERS.2018.8597696
M3 - 会议稿件
AN - SCOPUS:85060905279
T3 - Progress in Electromagnetics Research Symposium
SP - 1254
EP - 1257
BT - 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2018 Progress In Electromagnetics Research Symposium, PIERS-Toyama 2018
Y2 - 1 August 2018 through 4 August 2018
ER -