High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm

Z. Zhang; N. J. Ruan; F. Zhou; Z. J. Liu; L. J. Xu

doi:10.1134/S1054660X11110399

High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm

Z. Zhang^*
, N. J. Ruan
, F. Zhou
, Z. J. Liu
, L. J. Xu

^*此作品的通讯作者

仪器科学与光电工程学院

China Aerospace Science and Technology Corporation

科研成果: 期刊稿件 › 文章 › 同行评审

14 引用（Scopus）

摘要

A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 mm ₃. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%.

源语言	英语
页（从-至）	1078-1080
页数	3
期刊	Laser Physics
卷	21
期	6
DOI	https://doi.org/10.1134/S1054660X11110399
出版状态	已出版 - 6月 2011

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@article{ff342391fdcd4e4685aca50a9696f120,

title = "High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm",

abstract = "A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at \% for the experiment was c-cut with dimensions of 3 {\texttimes} 3 {\texttimes} 8 mm 3. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15\% output coupling, corresponding to optical conversion efficiency was 31.6\% and the slope efficiency was 38.2\%.",

author = "Z. Zhang and Ruan, \{N. J.\} and F. Zhou and Liu, \{Z. J.\} and Xu, \{L. J.\}",

year = "2011",

month = jun,

doi = "10.1134/S1054660X11110399",

language = "英语",

volume = "21",

pages = "1078--1080",

journal = "Laser Physics",

issn = "1054-660X",

publisher = "Institute of Physics Publishing",

number = "6",

}

TY - JOUR

T1 - High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm

AU - Zhang, Z.

AU - Ruan, N. J.

AU - Zhou, F.

AU - Liu, Z. J.

AU - Xu, L. J.

PY - 2011/6

Y1 - 2011/6

N2 - A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 mm 3. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%.

AB - A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 mm 3. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%.

UR - https://www.scopus.com/pages/publications/80051674635

U2 - 10.1134/S1054660X11110399

DO - 10.1134/S1054660X11110399

M3 - 文章

AN - SCOPUS:80051674635

SN - 1054-660X

VL - 21

SP - 1078

EP - 1080

JO - Laser Physics

JF - Laser Physics

IS - 6

ER -

High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm

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