TY - GEN
T1 - High-power and broadband terahertz TWT amplifier based on high order mode staggered double vane structure
AU - Zhang, Zheng
AU - Ruan, Cunjun
N1 - Publisher Copyright:
© 2019 IEEE.
PY - 2019/12
Y1 - 2019/12
N2 - Much of attention has been paid to VEDs towards terahertz band. In this paper, the TM31 mode SDV-SWS operating at the center frequency of 340 GHz are designed and studied with a good beam-wave matching bandwidth. A TE10 to TE30 mode converter with input/out- put coupling structures are designed and analyzed. The SDV-SWS system has a transmission characteristic of S11 at -10dB and a S21 of about 0dB at a bandwidth of 330-380 GHz. The effects of physical simulation parameters on beam-wave interaction characteristics with its stability of TM31 mode SDV-TWT are studied thoroughly, the output power, gain and bandwidth are optimized respectively. With the beam voltage of 23.1 kV and beam current of 3 ∗ 0.08 A, the optimized two-stage SDV-TWT amplifier has a maximum output power of 40 W near the center frequency, and the gain is 36dB with a 3dB bandwidth of38GHz.
AB - Much of attention has been paid to VEDs towards terahertz band. In this paper, the TM31 mode SDV-SWS operating at the center frequency of 340 GHz are designed and studied with a good beam-wave matching bandwidth. A TE10 to TE30 mode converter with input/out- put coupling structures are designed and analyzed. The SDV-SWS system has a transmission characteristic of S11 at -10dB and a S21 of about 0dB at a bandwidth of 330-380 GHz. The effects of physical simulation parameters on beam-wave interaction characteristics with its stability of TM31 mode SDV-TWT are studied thoroughly, the output power, gain and bandwidth are optimized respectively. With the beam voltage of 23.1 kV and beam current of 3 ∗ 0.08 A, the optimized two-stage SDV-TWT amplifier has a maximum output power of 40 W near the center frequency, and the gain is 36dB with a 3dB bandwidth of38GHz.
UR - https://www.scopus.com/pages/publications/85082455233
U2 - 10.1109/PIERS-Fall48861.2019.9021797
DO - 10.1109/PIERS-Fall48861.2019.9021797
M3 - 会议稿件
AN - SCOPUS:85082455233
T3 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
SP - 555
EP - 559
BT - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2019 Photonics and Electromagnetics Research Symposium - Fall, PIERS - Fall 2019
Y2 - 17 December 2019 through 20 December 2019
ER -