TY - GEN
T1 - High-performance Type-y Spin-orbit Torque MRAM Devices
AU - Zhang, Hongchao
AU - Lu, Shiyang
AU - Cao, Kaihua
AU - Liu, Hongxi
AU - Zhao, Weisheng
N1 - Publisher Copyright:
© 2023 IEEE.
PY - 2023
Y1 - 2023
N2 - We demonstrated in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices capable of low switching current density, fast speed, high reliability and most importantly, manufactured uniformly by the 200 mm-wafer platform. The SOT-MTJ devices are integrated on 200 m-wafers using two-metal-layers back-end-of-line (BEOL) process. The performances of the devices are systematically studied, including magnetic properties, endurance, data retention and switching dynamic of the devices. Specifically, the devices exhibit low critical switching current density JC∼160 MA/cm2 at 0.3 ns, high tunneling magnetoresistance (TMR) ratios exceeding 100%, ultra-high endurance over 1012 cycles, and excellent thermal stability Eb > 100 kBT. The research provides flexible solutions for high-speed and energy efficient memory applications. As a prospective, it is expected to obtain excellent performance of the devices through further optimizing the MTJ film stacks and corresponding fabrication processes.
AB - We demonstrated in-plane field-free-switching spin-orbit torque (SOT) magnetic tunnel junction (MTJ) devices capable of low switching current density, fast speed, high reliability and most importantly, manufactured uniformly by the 200 mm-wafer platform. The SOT-MTJ devices are integrated on 200 m-wafers using two-metal-layers back-end-of-line (BEOL) process. The performances of the devices are systematically studied, including magnetic properties, endurance, data retention and switching dynamic of the devices. Specifically, the devices exhibit low critical switching current density JC∼160 MA/cm2 at 0.3 ns, high tunneling magnetoresistance (TMR) ratios exceeding 100%, ultra-high endurance over 1012 cycles, and excellent thermal stability Eb > 100 kBT. The research provides flexible solutions for high-speed and energy efficient memory applications. As a prospective, it is expected to obtain excellent performance of the devices through further optimizing the MTJ film stacks and corresponding fabrication processes.
KW - BEOL
KW - SOT MTJ
KW - switching dynamic
KW - thermal stability
UR - https://www.scopus.com/pages/publications/85172734887
U2 - 10.1109/INTERMAGShortPapers58606.2023.10228544
DO - 10.1109/INTERMAGShortPapers58606.2023.10228544
M3 - 会议稿件
AN - SCOPUS:85172734887
T3 - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
BT - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2023 IEEE International Magnetic Conference - Short Papers, INTERMAG Short Papers 2023
Y2 - 15 May 2023 through 19 May 2023
ER -