High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-6,c,d]thiophene

Yanming Sun; Lin Tan; Shidong Jiang; Hualei Qian; Zhaohui Wang; Dongwei Yan; Chongan Di; Ying Wang; Weiping Wu; Gui Yu; Shouke Yan; Chunru Wang; Wenping Hu; Yunqi Liu; Daoben Zhu

doi:10.1021/ja068079g

High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-6,c,d]thiophene

Yanming Sun
, Lin Tan
, Shidong Jiang
, Hualei Qian
, Zhaohui Wang^*
, Dongwei Yan
, Chongan Di
, Ying Wang
, Weiping Wu
, Gui Yu
, Shouke Yan
, Chunru Wang
, Wenping Hu
, Yunqi Liu
, Daoben Zhu

^*此作品的通讯作者

CAS - Institute of Chemistry

科研成果: 期刊稿件 › 文章 › 同行评审

153 引用（Scopus）

摘要

We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm² V^-1 s^-1, an on/off ratio of 10⁵, and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm² V^-1 s^-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S⋯S interactions may contribute to the high performance.

源语言	英语
页（从-至）	1882-1883
页数	2
期刊	Journal of the American Chemical Society
卷	129
期	7
DOI	https://doi.org/10.1021/ja068079g
出版状态	已出版 - 21 2月 2007
已对外发布	是

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title = "High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-6,c,d]thiophene",

abstract = "We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm2 V-1 s-1, an on/off ratio of 105, and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm2 V-1 s-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S⋯S interactions may contribute to the high performance.",

author = "Yanming Sun and Lin Tan and Shidong Jiang and Hualei Qian and Zhaohui Wang and Dongwei Yan and Chongan Di and Ying Wang and Weiping Wu and Gui Yu and Shouke Yan and Chunru Wang and Wenping Hu and Yunqi Liu and Daoben Zhu",

year = "2007",

month = feb,

day = "21",

doi = "10.1021/ja068079g",

language = "英语",

volume = "129",

pages = "1882--1883",

journal = "Journal of the American Chemical Society",

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TY - JOUR

T1 - High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-6,c,d]thiophene

AU - Sun, Yanming

AU - Tan, Lin

AU - Jiang, Shidong

AU - Qian, Hualei

AU - Wang, Zhaohui

AU - Yan, Dongwei

AU - Di, Chongan

AU - Wang, Ying

AU - Wu, Weiping

AU - Yu, Gui

AU - Yan, Shouke

AU - Wang, Chunru

AU - Hu, Wenping

AU - Liu, Yunqi

AU - Zhu, Daoben

PY - 2007/2/21

Y1 - 2007/2/21

N2 - We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm2 V-1 s-1, an on/off ratio of 105, and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm2 V-1 s-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S⋯S interactions may contribute to the high performance.

AB - We have first investigated the thin-film field-effect behavior of perylo[1,12-b,c,d]thiophene by vacuum evaporation technique, which exhibits a moderate mobility of 0.05 cm2 V-1 s-1, an on/off ratio of 105, and a low threshold voltage of -6.3 V at room temperature. Moreover, we have grown its single-crystalline micrometer wires and successfully applied them to transistors. A high mobility up to 0.8 cm2 V-1 s-1 has been achieved. The extraordinary solid-state packing arrangement with the likelihood of double-channel fashion induced by marked S⋯S interactions may contribute to the high performance.

UR - https://www.scopus.com/pages/publications/33847250422

U2 - 10.1021/ja068079g

DO - 10.1021/ja068079g

M3 - 文章

AN - SCOPUS:33847250422

SN - 0002-7863

VL - 129

SP - 1882

EP - 1883

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

IS - 7

ER -

High-performance transistor based on individual single-crystalline micrometer wire of perylo[1,12-6,c,d]thiophene

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