TY - GEN
T1 - High performance SoC design using magnetic logic and memory
AU - Zhao, Weisheng
AU - Torres, Lionel
AU - Cargnini, Luís Vitório
AU - Brum, Raphael Martins
AU - Zhang, Yue
AU - Guillemenet, Yoann
AU - Sassatelli, Gilles
AU - Lakys, Yahya
AU - Klein, Jacques Olivier
AU - Etiemble, Daniel
AU - Ravelosona, Dafiné
AU - Chappert, Claude
PY - 2012
Y1 - 2012
N2 - As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.
AB - As the technolody node shrinks down to 90nm and below, high standby power becomes one of the major critical issues for CMOS highspeed computing circuits (e.g. logic and cache memory) due to the high leakage currents. A number of non-volatile storage technologies, such as FRAM, MRAM, PCRAM and RRAM, are under investigation to bring the non-volatility into the logic circuits and then eliminate completely the standby power issue. Thanks to its infinite endurance, high switching/sensing speed and easy integration on top of CMOS process, MRAM is considered as the most promising one. Numerous logic circuits based on MRAM technology have been proposed and prototyped in the last years. In this paper, we present an overview and current status of these logic circuits and discuss their potential applications in the future from both physical and architectural points of view.
KW - MRAM
KW - Magnetic Logic
KW - Non-volatile CPU
KW - Reconfigurable logic
UR - https://www.scopus.com/pages/publications/84870711039
U2 - 10.1007/978-3-642-32770-4_2
DO - 10.1007/978-3-642-32770-4_2
M3 - 会议稿件
AN - SCOPUS:84870711039
SN - 9783642327698
T3 - IFIP Advances in Information and Communication Technology
SP - 10
EP - 33
BT - VLSI-SoC
PB - Springer New York LLC
T2 - 19th IFIP WG 10.5/IEEE International Conference on Very Large Scale Integration, VLSI-SoC 2011
Y2 - 3 October 2011 through 5 October 2011
ER -