High mobility, air stable, organic single crystal transistors of an n-type diperylene bisimide

Aifeng Lv; Sreenivasa R. Puniredd; Jiahui Zhang; Zhibo Li; Hongfei Zhu; Wei Jiang; Huanli Dong; Yudong He; Lang Jiang; Yan Li; Wojciech Pisula; Qing Meng; Wenping Hu; Zhaohui Wang

doi:10.1002/adma.201104987

High mobility, air stable, organic single crystal transistors of an n-type diperylene bisimide

Aifeng Lv
, Sreenivasa R. Puniredd
, Jiahui Zhang
, Zhibo Li^*
, Hongfei Zhu
, Wei Jiang
, Huanli Dong
, Yudong He
, Lang Jiang
, Yan Li
, Wojciech Pisula
, Qing Meng
, Wenping Hu
, Zhaohui Wang

^*此作品的通讯作者

CAS - Institute of Chemistry
University of Chinese Academy of Sciences
Max Planck Institute for Polymer Research

科研成果: 期刊稿件 › 文章 › 同行评审

209 引用（Scopus）

摘要

A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named "Au stripe mask" method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm ² V ^-1 s ^-1 with the highest mobility of 4.65 cm ² V ^-1 s ^-1. Moreover, the devices exhibit excellent air stability.

源语言	英语
页（从-至）	2626-2630
页数	5
期刊	Advanced Materials
卷	24
期	19
DOI	https://doi.org/10.1002/adma.201104987
出版状态	已出版 - 15 5月 2012
已对外发布	是

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title = "High mobility, air stable, organic single crystal transistors of an n-type diperylene bisimide",

abstract = "A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named {"}Au stripe mask{"} method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm 2 V -1 s -1 with the highest mobility of 4.65 cm 2 V -1 s -1. Moreover, the devices exhibit excellent air stability.",

keywords = "diperylene bisimide, electron mobility, organic electronics, transistors",

author = "Aifeng Lv and Puniredd, \{Sreenivasa R.\} and Jiahui Zhang and Zhibo Li and Hongfei Zhu and Wei Jiang and Huanli Dong and Yudong He and Lang Jiang and Yan Li and Wojciech Pisula and Qing Meng and Wenping Hu and Zhaohui Wang",

year = "2012",

month = may,

day = "15",

doi = "10.1002/adma.201104987",

language = "英语",

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TY - JOUR

T1 - High mobility, air stable, organic single crystal transistors of an n-type diperylene bisimide

AU - Lv, Aifeng

AU - Puniredd, Sreenivasa R.

AU - Zhang, Jiahui

AU - Li, Zhibo

AU - Zhu, Hongfei

AU - Jiang, Wei

AU - Dong, Huanli

AU - He, Yudong

AU - Jiang, Lang

AU - Li, Yan

AU - Pisula, Wojciech

AU - Meng, Qing

AU - Hu, Wenping

AU - Wang, Zhaohui

PY - 2012/5/15

Y1 - 2012/5/15

N2 - A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named "Au stripe mask" method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm 2 V -1 s -1 with the highest mobility of 4.65 cm 2 V -1 s -1. Moreover, the devices exhibit excellent air stability.

AB - A new n-type organic semiconductor, i.e., C12-4CldiPBI, is synthesized by a simple and facile route. Single crystal ribbons of C12-4CldiPBI are grown facilely by a solvent vapor diffusion strategy. Organic field-effect transistors based on individual ribbons are fabricated by a new technique named "Au stripe mask" method. All devices exhibit excellent n-type transistor behavior with negligible hysteresis, and all devices give an electron mobility over 1.0 cm 2 V -1 s -1 with the highest mobility of 4.65 cm 2 V -1 s -1. Moreover, the devices exhibit excellent air stability.

KW - diperylene bisimide

KW - electron mobility

KW - organic electronics

KW - transistors

UR - https://www.scopus.com/pages/publications/84861064152

U2 - 10.1002/adma.201104987

DO - 10.1002/adma.201104987

M3 - 文章

C2 - 22499262

AN - SCOPUS:84861064152

SN - 0935-9648

VL - 24

SP - 2626

EP - 2630

JO - Advanced Materials

JF - Advanced Materials

IS - 19

ER -

High mobility, air stable, organic single crystal transistors of an n-type diperylene bisimide

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