Hall resistivity of Fe doped Si film at low temperatures

Nonmonotonically magnetic-field-dependent and sensitively temperature-dependent Hall resistivity of Fe doped Si film has been systematically studied at low temperatures. Two-band of holes conduction mechanism is proposed to be responsible for the observed extraordinary Hall resistivity, as well as magnetoresistance characteristics. Holes in the valence band are generated by thermal activation of electrons from the valence band to shallow acceptor levels with an activation energy of 41.2 meV while holes in acceptor impurity band transport by hopping processes with an activation energy of 2.5 meV. This work shows that even very complicated behavior of Hall resistivity may be understood under a two-band conduction mechanism.