跳到主要导航 跳到搜索 跳到主要内容

Growth mechanism of subsurface hydrogen cavities in tungsten exposed to low-energy high-flux hydrogen plasma

  • W. Q. Chen
  • , X. Y. Wang
  • , Y. L. Chiu*
  • , T. W. Morgan
  • , W. G. Guo
  • , K. L. Li
  • , Y. Yuan
  • , B. Xu
  • , W. Liu
  • *此作品的通讯作者
  • Laboratory of Advanced Materials of Ministry of Education
  • Tsinghua University
  • School of Metallurgy and Materials
  • University of Birmingham
  • Dutch Institute for Fundamental Energy Research
  • School of Physics
  • Beihang University

科研成果: 期刊稿件 › 文章 › 同行评审

摘要

Due to a lack of direct experimental results, the detailed mechanisms that govern the blistering behavior of tungsten (W) exposed to ITER-relevant condition in nuclear fusion remain unclear. The growth mechanism of hydrogen (H) blisters is one example. In this work, recrystallized W was exposed to H plasma at 50 eV, 1.5×1026m−2, and 573 K. Transmission electron microscopy (TEM) samples were prepared using plasma-focused ion beam (FIB) followed by flash-polishing to effectively remove surface damages induced by FIB. The TEM images revealed that the general blisters observed on the exposed surface are associated with underlying cavities. A considerable amount of dislocations were found in the vicinity of the cavities. Prismatic dislocation loop arrays were observed, including small size 'coffee-bean' prismatic loops and large size prismatic loops. Near the tip of surfaces cavities, evidences for the emission of shear loops were also found. Based on the experimental findings, a multi-stage growth mechanism of H cavities was proposed. The loop-punching mechanism is operative for both very small cavities and cavities with sizes larger than several hundreds of nanometers. Whereas at intermediate sizes, cavities grow by emitting shear loops from the cavity tip.

源语言英语
页(从-至)19-27
页数9
期刊Acta Materialia
卷193
DOI
出版状态已出版 - 7月 2020

学术指纹

探究 'Growth mechanism of subsurface hydrogen cavities in tungsten exposed to low-energy high-flux hydrogen plasma' 的科研主题。它们共同构成独一无二的学术指纹。

引用此