@inproceedings{5b99a0bbcc7c41098b6e800842689d37,
title = "Growth mechanism of CVD oriented boron nitride films",
abstract = "Oriented hexagonal BN (h-BN) films with (0002) basal plane lying on Si(100) substrates were prepared both by microwave electron cyclotron resonance (MW-ECR) CVD and radio frequency plasma enhanced CVD (PECVD). Fourier Transform Infrared Spectroscopy (FTIR) measurements showed that in this case the absorption peak of the B-N bonds in-plane stretching mode was activated, while that of the B-N-B bonds out-of-plane mode was not activated. X-ray diffraction (XRD) results showed the unique diffraction of the basal plane. Moreover, it was also evidenced that the typical hexagonal morphology of the oriented h-BN film is acquired by Atomic Force Microscopy (AFM). The orientation driver force in MW-ECR-CVD was the negative bias applied to the substrate, while in PECVD it was the reactive temperature.",
keywords = "BN films, ECR, Negative bias, Orientation, PECVD, Substrate temperature",
author = "B. Wang and M. Wang and Zhang, \{S. J.\} and Huang, \{A. P.\} and ZHang, \{D. X.\} and Q. Zhao and H. Zhou and H. Yan",
year = "2003",
language = "英语",
isbn = "1880132796",
series = "Mechanics and Material Engineering for Science and Experiments",
pages = "308--311",
editor = "Y. Zhou and Y. Ghu and Z. Li and Y. Zhou and Y. Gu and Z. Li",
booktitle = "Mechanics and Material Engineering for Science and Experiments",
note = "Proceedings of the International Symposium of Young Scholars on Mechanics and Material Engineering for Science and Experiments ; Conference date: 11-08-2001 Through 16-08-2001",
}