Growth and characterization of the magnesia thin film by atmospheric-pressure MOCVD

High quality MgO thin films have been successfully grown on glass, Al₂O₃, Si(111) and Si(100) substrates at 480°C by using atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) technique. Magnesium 2, 4-pentanedionate was used as metalorganic source. X-ray diffraction experiments provided evidence that the MgO films grown on glass, Al₂O₃, Si(111) and Si(100) with (100) orientation were regardless of the substrate materials and orientations. The as-grown MgO film on Si(100) has a very smooth surface morphology and a nearly stoichiometric composition by scanning electron microscopy (SEM) and Rutherford backscattering (RBS). According to the simulation, diffusion of Si near the interface was found when the growth time reached 70 min.