GRAPHENE DEVICES FOR HIGH-FREQUENCY ELECTRONICS AND THZ TECHNOLOGY

Recent years have witnessed many exciting breakthroughs in graphene as a promising material in electronics and optoelectronics. The novel physical properties of graphene afford multiple functions of signal emitting, transmitting, modulating, and detection to be realized in one material. This chapter provides an introduction to physical properties of graphene, and then graphene high-frequency transistors are discussed and are compared to silicon and III-V transistors. The latest progresses and prospective on the circuit implementations of graphene field-effect transistors (FETs) are looked into including mixers, frequency multipliers, and inverters. These recent pioneering developments open up a route towards the integration of graphene in hybrid silicon circuits to embrace the use of monolithic electronic integrated circuits to maximize system functionality, improve service flexibility, and simplify operations.