摘要
Based on the photoconductive effect of the semiconductive materials, the photoconductive switch was developed. When the switch biased at 4kV bias voltage is triggered by a laser pulse of 12ns in its pulse-width, an electric pulse of about 16ns in pulse-width, about 1.8kV in peak-voltage, and about 65kW in peak-power is obtained with its load resistance of 50ohm. Besides, the key technologies of the photoconductive switch such as the dark resistance, carrier life, and the contact resistance etc were also described.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 146-149 |
| 页数 | 4 |
| 期刊 | Jiguang Jishu/Laser Technology |
| 卷 | 19 |
| 期 | 3 |
| 出版状态 | 已出版 - 6月 1995 |
| 已对外发布 | 是 |
指纹
探究 'Generation of the ultrashort, high-voltage and high-power electrical pulse through using a photoconductive switch' 的科研主题。它们共同构成独一无二的指纹。引用此
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