Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO 4 laser

Jin Long Xu; Ying Yang; Jing Liang He; Bing Yuan Zhang; Xiu Qin Yang; Shan De Liu; Bai Tao Zhang; He Yang

doi:10.1109/JQE.2012.2185687

Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO ₄ laser

Jin Long Xu^*
, Ying Yang
, Jing Liang He
, Bing Yuan Zhang
, Xiu Qin Yang
, Shan De Liu
, Bai Tao Zhang
, He Yang

^*此作品的通讯作者

Shandong University

科研成果: 期刊稿件 › 文章 › 同行评审

11 引用（Scopus）

摘要

We have reported on the development of the 1.34-μm high-power mode-locked Nd:GdVO ₄ laser with a semiconductor saturable absorber mirror. Based on optimum resonator design, average output power of 2.2 W was produced, corresponding to a slope efficiency of 17%. The laser operated at five spectral bands around 1.34 μm with long-time stability. 3.3 ps of pulse duration was obtained, which is the best performance among 1.3-μm mode-locked neodymium-doped lasers.

源语言	英语
文章编号	6138271
页（从-至）	622-627
页数	6
期刊	IEEE Journal of Quantum Electronics
卷	48
期	5
DOI	https://doi.org/10.1109/JQE.2012.2185687
出版状态	已出版 - 2012
已对外发布	是

访问文件

10.1109/JQE.2012.2185687

其它文件与链接

链接到 Scopus 的出版物

引用此

@article{6a6d705b970e4d76b786164e7675a4d4,

title = "Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO 4 laser",

abstract = "We have reported on the development of the 1.34-μm high-power mode-locked Nd:GdVO 4 laser with a semiconductor saturable absorber mirror. Based on optimum resonator design, average output power of 2.2 W was produced, corresponding to a slope efficiency of 17\%. The laser operated at five spectral bands around 1.34 μm with long-time stability. 3.3 ps of pulse duration was obtained, which is the best performance among 1.3-μm mode-locked neodymium-doped lasers.",

keywords = "1.3 μm, Nd:GdVO, diode pumping, mode locking, multiple spectral bands, ultrafast optics",

author = "Xu, \{Jin Long\} and Ying Yang and He, \{Jing Liang\} and Zhang, \{Bing Yuan\} and Yang, \{Xiu Qin\} and Liu, \{Shan De\} and Zhang, \{Bai Tao\} and He Yang",

year = "2012",

doi = "10.1109/JQE.2012.2185687",

language = "英语",

volume = "48",

pages = "622--627",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5",

}

TY - JOUR

T1 - Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO 4 laser

AU - Xu, Jin Long

AU - Yang, Ying

AU - He, Jing Liang

AU - Zhang, Bing Yuan

AU - Yang, Xiu Qin

AU - Liu, Shan De

AU - Zhang, Bai Tao

AU - Yang, He

PY - 2012

Y1 - 2012

N2 - We have reported on the development of the 1.34-μm high-power mode-locked Nd:GdVO 4 laser with a semiconductor saturable absorber mirror. Based on optimum resonator design, average output power of 2.2 W was produced, corresponding to a slope efficiency of 17%. The laser operated at five spectral bands around 1.34 μm with long-time stability. 3.3 ps of pulse duration was obtained, which is the best performance among 1.3-μm mode-locked neodymium-doped lasers.

AB - We have reported on the development of the 1.34-μm high-power mode-locked Nd:GdVO 4 laser with a semiconductor saturable absorber mirror. Based on optimum resonator design, average output power of 2.2 W was produced, corresponding to a slope efficiency of 17%. The laser operated at five spectral bands around 1.34 μm with long-time stability. 3.3 ps of pulse duration was obtained, which is the best performance among 1.3-μm mode-locked neodymium-doped lasers.

KW - 1.3 μm

KW - Nd:GdVO

KW - diode pumping

KW - mode locking

KW - multiple spectral bands

KW - ultrafast optics

UR - https://www.scopus.com/pages/publications/84858992648

U2 - 10.1109/JQE.2012.2185687

DO - 10.1109/JQE.2012.2185687

M3 - 文章

AN - SCOPUS:84858992648

SN - 0018-9197

VL - 48

SP - 622

EP - 627

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

IS - 5

M1 - 6138271

ER -

Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO 4 laser

摘要

访问文件

其它文件与链接

指纹

引用此

Generation of 3.3-ps pulses at 1.34 μm from high-power passively mode-locked Nd:GdVO ₄ laser