Functionalized dendritic memristor of Pt/MoS₂@LCO-PVA/Si for Mimicking synaptic behavior

Artificial synaptic memristors, with their adjustable and non-volatile resistance, present a promising path for neuromorphic computing (NC). Inspired by the salting-out producing dense fractal dendritic morphologies, a dendritic ion framework composed of LiClO₄·3H₂O (LCO) and polyvinyl alcohol (PVA) is prepared by spin coating. The functionalized dendritic Pt/MoS₂@LCO-PVA/Si memristor boasts 1,670 endurance cycles and a retention time exceeding 10⁴ s. MoS₂ nanosheets act as the intermediate to improve ion transportation and storage, and the multi-local enhanced electric field is verified by multi-physics COMSOL simulation. Synaptic plasticity, such as spike-voltage-dependent plasticity, long-term potentiation/depression, and spike-timing-dependent plasticity are also investigated. The dendritic device achieves a digit recognition accuracy of 91.4 % according to simulations of artificial neural networks. The results reveal a new approach that expands the applications of NC.