@inproceedings{6b562560b046424c87c307d366779cef,
title = "Full reliability characterization of three-terminal SOT-MTJ devices and corresponding arrays",
abstract = "We have systematically investigated the reliability performance of spin-orbit torque (SOT) magnetic random access memory (MRAM) devices, including electromigration (EM), stress migration (SM), endurance and data retention. The results show that the SOT-MRAM devices pass the EM requirement over 10 years lifetime under the operation condition, and pass the SM requirement over 1000 hours baking at 175°C. Moreover, high endurance close to 1014 cycles and robust data retention over 10 years storage time were demonstrated for the same SOT-MRAM devices. This full characterization fills the blank of SOT-MRAM reliability research and would contribute to the commercialization of the SOT-MRAM.",
keywords = "Electromigration, SOT-MRAM, Stress Migration, data retention, endurance, reliability",
author = "Xinyi Xu and Hongchao Zhang and Chuanpeng Jiang and Jinhao Li and Shiyang Lu and Yunpeng Li and Honglei Du and Xueying Zhang and Zhaohao Wang and Kaihua Cao and Weisheng Zhao and Shuqin Lyu and Hao Xu and Bonian Jiang and Le Wang and Bowen Man and Cong Zhang and Dandan Li and Shuhui Li and Xiaofei Fan and Gefei Wang and Liu, \{Hong Xi\}",
note = "Publisher Copyright: {\textcopyright} 2023 IEEE.; 61st IEEE International Reliability Physics Symposium, IRPS 2023 ; Conference date: 26-03-2023 Through 30-03-2023",
year = "2023",
doi = "10.1109/IRPS48203.2023.10117643",
language = "英语",
series = "IEEE International Reliability Physics Symposium Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings",
address = "美国",
}