Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs

Yang Wang; Chen Wang; Tao Chen; Hao Liu; Chinte Kuo; Ke Zhou; Binfeng Yin; Lin Chen; Qing Qing Sun

doi:10.1109/IRPS45951.2020.9129093

Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs

Yang Wang
, Chen Wang
, Tao Chen
, Hao Liu
, Chinte Kuo
, Ke Zhou
, Binfeng Yin
, Lin Chen
, Qing Qing Sun^*

^*此作品的通讯作者

Fudan University
Shanghai Huali Microelectronics Corporation

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

1 引用（Scopus）

摘要

In this work, we investigated Bias Temperature Instability under front-plane and back-plane stress based on 22 nm gate-last FDSOI MOSFETs. The front-plane stress, which was twice the operation voltage, was applied to gate under 25 ^oC and 125 ^oC, while the back-plane stress, which was under similar electric field of front-plane stress, was applied to back-gate. The DC I-V measurement was carried out after the removal of the stress. For both nMOSFETs and pMOSFETs, the degradation of Id,lin and Id,sat, and the Vth shift were calculated to measure the deterioration of the devices. The results demonstrated that under similar electric field, the degradation caused by back-plane stress was more severe than that of front-plane stress.

源语言	英语
主期刊名	2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings
出版商	Institute of Electrical and Electronics Engineers Inc.
ISBN（电子版）	9781728131993
DOI	https://doi.org/10.1109/IRPS45951.2020.9129093
出版状态	已出版 - 4月 2020
已对外发布	是
活动	2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Virtual, Online, 美国期限: 28 4月 2020 → 30 5月 2020

出版系列

姓名	IEEE International Reliability Physics Symposium Proceedings
卷	2020-April
ISSN（印刷版）	1541-7026

会议

会议	2020 IEEE International Reliability Physics Symposium, IRPS 2020
国家/地区	美国
市	Virtual, Online
时期	28/04/20 → 30/05/20

访问文件

10.1109/IRPS45951.2020.9129093

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引用此

Wang, Y., Wang, C., Chen, T., Liu, H., Kuo, C., Zhou, K., Yin, B., Chen, L., & Sun, Q. Q. (2020). Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. 在 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings 文章 9129093 (IEEE International Reliability Physics Symposium Proceedings; 卷 2020-April). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS45951.2020.9129093

@inproceedings{a4ec5c57f81648b99b9821d2f169634d,

title = "Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs",

abstract = "In this work, we investigated Bias Temperature Instability under front-plane and back-plane stress based on 22 nm gate-last FDSOI MOSFETs. The front-plane stress, which was twice the operation voltage, was applied to gate under 25 oC and 125 oC, while the back-plane stress, which was under similar electric field of front-plane stress, was applied to back-gate. The DC I-V measurement was carried out after the removal of the stress. For both nMOSFETs and pMOSFETs, the degradation of Id,lin and Id,sat, and the Vth shift were calculated to measure the deterioration of the devices. The results demonstrated that under similar electric field, the degradation caused by back-plane stress was more severe than that of front-plane stress.",

keywords = "Bias Temperature Instability, Front-plane and back-plane stress, Gate-last FDSOI, Id degradation, Vth shift",

author = "Yang Wang and Chen Wang and Tao Chen and Hao Liu and Chinte Kuo and Ke Zhou and Binfeng Yin and Lin Chen and Sun, \{Qing Qing\}",

note = "Publisher Copyright: {\textcopyright} 2020 IEEE.; 2020 IEEE International Reliability Physics Symposium, IRPS 2020 ; Conference date: 28-04-2020 Through 30-05-2020",

year = "2020",

month = apr,

doi = "10.1109/IRPS45951.2020.9129093",

language = "英语",

series = "IEEE International Reliability Physics Symposium Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings",

address = "美国",

}

Wang, Y, Wang, C, Chen, T, Liu, H, Kuo, C, Zhou, K, Yin, B, Chen, L & Sun, QQ 2020, Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. 在 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings., 9129093, IEEE International Reliability Physics Symposium Proceedings, 卷 2020-April, Institute of Electrical and Electronics Engineers Inc., 2020 IEEE International Reliability Physics Symposium, IRPS 2020, Virtual, Online, 美国, 28/04/20. https://doi.org/10.1109/IRPS45951.2020.9129093

Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. / Wang, Yang; Wang, Chen; Chen, Tao 等.
2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2020. 9129093 (IEEE International Reliability Physics Symposium Proceedings; 卷 2020-April).

科研成果: 书/报告/会议事项章节 › 会议稿件 › 同行评审

TY - GEN

T1 - Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs

AU - Wang, Yang

AU - Wang, Chen

AU - Chen, Tao

AU - Liu, Hao

AU - Kuo, Chinte

AU - Zhou, Ke

AU - Yin, Binfeng

AU - Chen, Lin

AU - Sun, Qing Qing

PY - 2020/4

Y1 - 2020/4

N2 - In this work, we investigated Bias Temperature Instability under front-plane and back-plane stress based on 22 nm gate-last FDSOI MOSFETs. The front-plane stress, which was twice the operation voltage, was applied to gate under 25 oC and 125 oC, while the back-plane stress, which was under similar electric field of front-plane stress, was applied to back-gate. The DC I-V measurement was carried out after the removal of the stress. For both nMOSFETs and pMOSFETs, the degradation of Id,lin and Id,sat, and the Vth shift were calculated to measure the deterioration of the devices. The results demonstrated that under similar electric field, the degradation caused by back-plane stress was more severe than that of front-plane stress.

AB - In this work, we investigated Bias Temperature Instability under front-plane and back-plane stress based on 22 nm gate-last FDSOI MOSFETs. The front-plane stress, which was twice the operation voltage, was applied to gate under 25 oC and 125 oC, while the back-plane stress, which was under similar electric field of front-plane stress, was applied to back-gate. The DC I-V measurement was carried out after the removal of the stress. For both nMOSFETs and pMOSFETs, the degradation of Id,lin and Id,sat, and the Vth shift were calculated to measure the deterioration of the devices. The results demonstrated that under similar electric field, the degradation caused by back-plane stress was more severe than that of front-plane stress.

KW - Bias Temperature Instability

KW - Front-plane and back-plane stress

KW - Gate-last FDSOI

KW - Id degradation

KW - Vth shift

UR - https://www.scopus.com/pages/publications/85088364860

U2 - 10.1109/IRPS45951.2020.9129093

DO - 10.1109/IRPS45951.2020.9129093

M3 - 会议稿件

AN - SCOPUS:85088364860

T3 - IEEE International Reliability Physics Symposium Proceedings

BT - 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2020 IEEE International Reliability Physics Symposium, IRPS 2020

Y2 - 28 April 2020 through 30 May 2020

ER -

Wang Y, Wang C, Chen T, Liu H, Kuo C, Zhou K 等. Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs. 在 2020 IEEE International Reliability Physics Symposium, IRPS 2020 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2020. 9129093. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS45951.2020.9129093

Front-plane and Back-plane Bias Temperature Instability of 22 nm Gate-last FDSOI MOSFETs

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