Fluorescence quenching of CdSe quantum dots on graphene

Xi Tao Guo; Zhen Hua Ni; Chun Yan Liao; Hai Yan Nan; Yan Zhang; Wei Wei Zhao; Wen Hui Wang

doi:10.1063/1.4831670

Fluorescence quenching of CdSe quantum dots on graphene

Xi Tao Guo
, Zhen Hua Ni^*
, Chun Yan Liao
, Hai Yan Nan
, Yan Zhang
, Wei Wei Zhao
, Wen Hui Wang

^*此作品的通讯作者

Southeast University, Nanjing
Northwest University China

科研成果: 期刊稿件 › 文章 › 同行评审

17 引用（Scopus）

摘要

We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (∼13.1) and its multilayers is much larger than rGO (∼4.4), while GO (∼1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

源语言	英语
文章编号	201909
期刊	Applied Physics Letters
卷	103
期	20
DOI	https://doi.org/10.1063/1.4831670
出版状态	已出版 - 11 11月 2013
已对外发布	是

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abstract = "We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (∼13.1) and its multilayers is much larger than rGO (∼4.4), while GO (∼1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.",

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T1 - Fluorescence quenching of CdSe quantum dots on graphene

AU - Guo, Xi Tao

AU - Hua Ni, Zhen

AU - Yan Liao, Chun

AU - Yan Nan, Hai

AU - Zhang, Yan

AU - Wei Zhao, Wei

AU - Hui Wang, Wen

PY - 2013/11/11

Y1 - 2013/11/11

N2 - We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (∼13.1) and its multilayers is much larger than rGO (∼4.4), while GO (∼1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

AB - We studied systematically the fluorescence quenching of CdSe quantum dots (QDs) on graphene and its multilayers, as well as graphene oxide (GO) and reduced graphene oxide (rGO). Raman intensity of QDs was used as a quantitatively measurement of its concentration in order to achieve a reliable quenching factor (QF). It was found that the QF of graphene (∼13.1) and its multilayers is much larger than rGO (∼4.4), while GO (∼1.5) has the lowest quenching efficiency, which suggests that the graphitic structure is an important factor for quenching the fluorescence of QDs. It was also revealed that the QF of graphene is not strongly dependent on its thicknesses.

UR - https://www.scopus.com/pages/publications/84889636698

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DO - 10.1063/1.4831670

M3 - 文章

AN - SCOPUS:84889636698

SN - 0003-6951

VL - 103

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 20

M1 - 201909

ER -

Fluorescence quenching of CdSe quantum dots on graphene

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