@inproceedings{3115d355cacc4270976f8f970a1c8361,
title = "Flash coding scheme based on error-correcting codes",
abstract = "Flash memory is a non-volatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block erasures are costly, traditional flash coding schemes have been developed to maximize the number of writes before a block erasure is needed. A novel coding scheme based on error-correcting codes allows the cell levels to increase as evenly as possibly and as a result, increases the number of writes before a block erasure. The scheme is also capable of combating noise in flash memories in order to enhance data reliability.",
keywords = "Block erasure, Block-write, Controllable errors, Error-correcting code, Flash code",
author = "Qin Huang and Shu Lin and Khaled Abdel-Ghaffar",
year = "2010",
doi = "10.1109/GLOCOM.2010.5683364",
language = "英语",
isbn = "9781424456383",
series = "GLOBECOM - IEEE Global Telecommunications Conference",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
booktitle = "2010 IEEE Global Telecommunications Conference, GLOBECOM 2010",
address = "美国",
note = "53rd IEEE Global Communications Conference, GLOBECOM 2010 ; Conference date: 06-12-2010 Through 10-12-2010",
}