Fabrication of 640 × 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice

Junbin Li; Peifeng Zhang; Longhua Chen; Zhe Zhang; Li Zhang; Wei Wang; Ying Su; Jiankai Xue; Xurui Peng; Haiyan Shi; Zichen Zhang

doi:10.1109/LPT.2026.3658437

Fabrication of 640 × 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice

Junbin Li
, Peifeng Zhang
, Longhua Chen
, Zhe Zhang
, Li Zhang
, Wei Wang
, Ying Su
, Jiankai Xue
, Xurui Peng
, Haiyan Shi
, Zichen Zhang^*

^*此作品的通讯作者

集成电路科学与工程学院

Beihang University
Shanxi Key Laboratory of Advanced Semiconductor Optoelectronic Devices and Integrated Systems
Shanxi Guoke Semiconductor Optoelectronics Company Ltd.

科研成果: 期刊稿件 › 文章 › 同行评审

2 引用（Scopus）

摘要

A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 × 10^-5 A/cm². With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.

源语言	英语
页（从-至）	631-634
页数	4
期刊	IEEE Photonics Technology Letters
卷	38
期	10
DOI	https://doi.org/10.1109/LPT.2026.3658437
出版状态	已出版 - 2026

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10.1109/LPT.2026.3658437

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@article{dfd587541fb94623a9dcd428f8ec9b76,

title = "Fabrication of 640 {\texttimes} 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice",

abstract = "A 640{\texttimes}512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50\% cutoff wavelength is 10.8 μm; under a reverse bias of \textasciitilde{}50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 {\texttimes} 10-5 A/cm2. With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8\%.",

keywords = "Focal plane array (FPA), long-wave infrared detector, type-II superlattice",

author = "Junbin Li and Peifeng Zhang and Longhua Chen and Zhe Zhang and Li Zhang and Wei Wang and Ying Su and Jiankai Xue and Xurui Peng and Haiyan Shi and Zichen Zhang",

note = "Publisher Copyright: {\textcopyright} 1989-2012 IEEE.",

year = "2026",

doi = "10.1109/LPT.2026.3658437",

language = "英语",

volume = "38",

pages = "631--634",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "10",

}

TY - JOUR

T1 - Fabrication of 640 × 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice

AU - Li, Junbin

AU - Zhang, Peifeng

AU - Chen, Longhua

AU - Zhang, Zhe

AU - Zhang, Li

AU - Wang, Wei

AU - Su, Ying

AU - Xue, Jiankai

AU - Peng, Xurui

AU - Shi, Haiyan

AU - Zhang, Zichen

PY - 2026

Y1 - 2026

N2 - A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 × 10-5 A/cm2. With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.

AB - A 640×512 focal plane array for long-wave infrared detection is demonstrated based on the type-II InAs/GaSb superlattice and PπMN device structure. At 77 K, the 50% cutoff wavelength is 10.8 μm; under a reverse bias of ~50 mV, the dark current density of single-element detector with mesa size of 25 μm is measured as 8.3 × 10-5 A/cm2. With an integration time of 0.5 ms and an f/2.0 aperture, a focal plane array operating at 77K exhibits a mean noise equivalent temperature difference (NETD) of 18.52 mK and a pixel operability of 99.8%.

KW - Focal plane array (FPA)

KW - long-wave infrared detector

KW - type-II superlattice

UR - https://www.scopus.com/pages/publications/105028873174

U2 - 10.1109/LPT.2026.3658437

DO - 10.1109/LPT.2026.3658437

M3 - 文章

AN - SCOPUS:105028873174

SN - 1041-1135

VL - 38

SP - 631

EP - 634

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 10

ER -

Fabrication of 640 × 512/25 μm LWIR Focal Plane Array Based on InAs/GaSb Superlattice

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