Fabrication and photoelectric properties of tungsten-doped indium oxide films

Tungsten-doped indium oxide (In₂O₃:W, IWO) films were prepared by DC reactive magnetron sputtering. The effects of oxygen partial pressure and sputtering time on surface morphology and photoelectric properties of IWO films were investigated. The result showed that the film surface morphology was closely related with the photoelectric properties. It was found that photoelectric properties of films were sensitive to the oxygen partial pressure because oxygen partial pressure could significantly influence the surface morphology of films, meanwhile sputtering time also significantly affected photoelectric properties of films: With oxygen partial pressure and sputtering time increased, the resistivity of films were decreased first and then increased. When oxygen partial pressure was 2.4×10^-1Pa, the arrangements of the films surface crystal grain were most compact, the as-deposited IWO films at optimum resistivity 6.3×10^-4Ω·cm were obtained with the Hall mobility up to its highest value 34cm²/(V·s) and the average transmittance about 85% in the visible light region from 400 to 700nm and over 80% in the near-infrared region from 700 to 2500nm.