Fabrication and characterization of epitaxial ferrimagnetic Mn₃Ga thin films with perpendicular magnetic anisotropy

Ferrimagnetic materials have recently been highly focused in the area of spintronics. In this work, epitaxial single-crystal ferrimagnetic Mn₃Ga thin films with perpendicular magnetic anisotropy were fabricated by optimizing the sputtering growth temperature. The exchange coupling to a soft ferromagnetic CoFe layer, anisotropic magnetoresistance, the anomalous Hall effect, and the effect of measuring current on the zero-field anomalous Hall resistance were investigated. An anomalous anisotropic magnetoresistance was observed for this perpendicular magnetized material, which may provide evidence for the recently predicted Weyl points in ferrimagnetic Mn₃Ga. In addition, this work may pave the way to current-induced magnetization switching assisted by Weyl-points-generated Berry curvature in a single ferrimagnetic layer under zero magnetic field.