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Evolution Mechanism of Copper Grains in Advanced Interconnect Processes

  • Yinuo Jin
  • , Han Zhang*
  • , Changqing Zhu
  • , Liang Du
  • , Simian Zhang
  • , Linbo Liu
  • , Qixing Yu
  • , Yu Yao
  • , Rong Yu*
  • , Chen Wang*
  • *此作品的通讯作者
  • Tsinghua University
  • Semiconductor Technology Innovation Center (Beijing) Corporation
  • Inc.
  • Beijing Advanced Innovation Center for Integrated Circuits

科研成果: 书/报告/会议事项章节会议稿件同行评审

摘要

In dual-damascene interconnect applications, the decreasing copper concentration and lower current/voltage in electrochemical plating pose challenges to Cu grain evolution. This paper investigates Cu grain growth in low-Cu plating solutions using two types of seed layers. Results show that larger original grains in CuMn seed layers lead to separation from the electroplated layer. During self-annealing, grains evolve vertically from the bottom upward due to seed stress, and horizontally from the wafer center outward under grain boundary forces. Moreover, precise control of current density can effectively optimize the growth behavior of Cu grains, thereby improving device performance.

源语言英语
主期刊名2025 Conference of Science and Technology of Integrated Circuits, CSTIC 2025
编辑Cor Claeys, Beichao Zhang, Beichao Zhang, Bin Yu, Peng Bai, Qianqian Huang, Xiaowei Li, Steve X. Liang, Hsiang-Lan Lung, Linyong Pang, Weikang Qian, Xinping Qu, Xiaoping Shi, Jianshi Tang, Ying Zhang, Pingqiang Zhou, Cheng Zhuo
出版商Institute of Electrical and Electronics Engineers Inc.
ISBN(电子版)9798331513351
DOI
出版状态已出版 - 2025
已对外发布
活动2025 Conference of Science and Technology of Integrated Circuits, CSTIC 2025 - Shanghai, 中国
期限: 24 5月 202525 5月 2025

出版系列

姓名2025 Conference of Science and Technology of Integrated Circuits, CSTIC 2025

会议

会议2025 Conference of Science and Technology of Integrated Circuits, CSTIC 2025
国家/地区中国
Shanghai
时期24/05/2525/05/25

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