跳到主要导航 跳到搜索 跳到主要内容

Error-correcting codes for flash coding

  • Qin Huang*
  • , Shu Lin
  • , Khaled A.S. Abdel-Ghaffar
  • *此作品的通讯作者
  • University of California at Davis

科研成果: 期刊稿件文章同行评审

摘要

Flash memory is a nonvolatile computer storage device which consists of blocks of cells. While increasing the voltage level of a single cell is fast and simple, reducing the level of a cell requires the erasing of the entire block containing the cell. Since block-erasures are costly, flash coding schemes have been developed to maximize the number of writes before a block-erasure is needed. A novel coding scheme based on error-correcting codes is presented that allows the cell levels to increase as evenly as possible and as a result, increases the number of writes before a block-erasure. The scheme is based on the premise that cells whose levels are higher than others need not be increased. This introduces errors in the recorded data which can be corrected by an error-correcting code provided that the number of erroneous cells is within the error-correcting capability of the code. The scheme is also capable of combating noise, causing additional errors and erasures, in flash memories in order to enhance data reliability. For added flexibility, the scheme can be combined with other flash codes to yield concatenated schemes of high memory rates.

源语言英语
期刊论文编号6006576
页(从-至)6097-6108
页数12
期刊IEEE Transactions on Information Theory
57
9
DOI
出版状态已出版 - 9月 2011
已对外发布

学术指纹

探究 'Error-correcting codes for flash coding' 的科研主题。它们共同构成独一无二的学术指纹。

引用此