Erratum: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)

Fengyou Yang; Shengyao Chen; Huimin Feng; Cong Wang; Xiaofeng Wang; Shu Wang; Zhican Zhou; Bo Li; Lijun Ma; Haiguang Yang; Yong Xie; Qian Liu

doi:10.1039/d0tc90064h

Erratum: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)

Fengyou Yang
, Shengyao Chen
, Huimin Feng
, Cong Wang
, Xiaofeng Wang
, Shu Wang
, Zhican Zhou
, Bo Li
, Lijun Ma
, Haiguang Yang
, Yong Xie
, Qian Liu^*

^*此作品的通讯作者

物理学院

National Center for Nanoscience and Technology
University of Chinese Academy of Sciences
Nankai University
Nanyang Technological University

科研成果: 期刊稿件 › 评论/辩论

摘要

The author regret an error in Fig. 4d of the published article; the corrected version of Fig. 4d is shown here. The rest of Fig. 4 and the caption are unchanged. Please note that these changes do not affect the results and conclusions reported in the article. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

源语言	英语
页（从-至）	5293
页数	1
期刊	Journal of Materials Chemistry C
卷	8
期	15
DOI	https://doi.org/10.1039/d0tc90064h
出版状态	已出版 - 21 4月 2020

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10.1039/d0tc90064h

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Yang, F., Chen, S., Feng, H., Wang, C., Wang, X., Wang, S., Zhou, Z., Li, B., Ma, L., Yang, H., Xie, Y., & Liu, Q. (2020). Erratum: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H). Journal of Materials Chemistry C, 8(15), 5293. https://doi.org/10.1039/d0tc90064h

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title = "Erratum: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)",

abstract = "The author regret an error in Fig. 4d of the published article; the corrected version of Fig. 4d is shown here. The rest of Fig. 4 and the caption are unchanged. Please note that these changes do not affect the results and conclusions reported in the article. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.",

author = "Fengyou Yang and Shengyao Chen and Huimin Feng and Cong Wang and Xiaofeng Wang and Shu Wang and Zhican Zhou and Bo Li and Lijun Ma and Haiguang Yang and Yong Xie and Qian Liu",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2020.",

year = "2020",

month = apr,

day = "21",

doi = "10.1039/d0tc90064h",

language = "英语",

volume = "8",

pages = "5293",

journal = "Journal of Materials Chemistry C",

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}

Yang, F, Chen, S, Feng, H, Wang, C, Wang, X, Wang, S, Zhou, Z, Li, B, Ma, L, Yang, H, Xie, Y & Liu, Q 2020, 'Erratum: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)', Journal of Materials Chemistry C, 卷 8, 号码 15, 页码 5293. https://doi.org/10.1039/d0tc90064h

TY - JOUR

T1 - Erratum

T2 - High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)

AU - Yang, Fengyou

AU - Chen, Shengyao

AU - Feng, Huimin

AU - Wang, Cong

AU - Wang, Xiaofeng

AU - Wang, Shu

AU - Zhou, Zhican

AU - Li, Bo

AU - Ma, Lijun

AU - Yang, Haiguang

AU - Xie, Yong

AU - Liu, Qian

PY - 2020/4/21

Y1 - 2020/4/21

N2 - The author regret an error in Fig. 4d of the published article; the corrected version of Fig. 4d is shown here. The rest of Fig. 4 and the caption are unchanged. Please note that these changes do not affect the results and conclusions reported in the article. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

AB - The author regret an error in Fig. 4d of the published article; the corrected version of Fig. 4d is shown here. The rest of Fig. 4 and the caption are unchanged. Please note that these changes do not affect the results and conclusions reported in the article. The Royal Society of Chemistry apologises for these errors and any consequent inconvenience to authors and readers.

UR - https://www.scopus.com/pages/publications/85084038600

U2 - 10.1039/d0tc90064h

DO - 10.1039/d0tc90064h

M3 - 评论/辩论

AN - SCOPUS:85084038600

SN - 2050-7526

VL - 8

SP - 5293

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

IS - 15

ER -

Erratum: High-performance optoelectronic memory based on bilayer MoS2 grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)

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Erratum: High-performance optoelectronic memory based on bilayer MoS₂ grown by Au catalyst (Journal of Materials Chemistry C (2020) 8 (2664-2668) DOI: 10.1039/C9TC06996H)