Erratum: Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))

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@article{6d110bd68b5a474eaf4302fd5ee37abd,

title = "Erratum: Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))",

author = "Xu, \{Y. Q.\} and Su, \{W. F.\} and Nie, \{T. X.\} and J. Cui and Shao, \{Y. M.\} and Jiang, \{Z. M.\}",

year = "2011",

month = jul,

day = "4",

doi = "10.1063/1.3608144",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "1",

}

TY - JOUR

T1 - Erratum

T2 - Hall resistivity of Fe doped Si film at low temperatures (Applied Physics Letters (2011) 98 (112109))

AU - Xu, Y. Q.

AU - Su, W. F.

AU - Nie, T. X.

AU - Cui, J.

AU - Shao, Y. M.

AU - Jiang, Z. M.

PY - 2011/7/4

Y1 - 2011/7/4

UR - https://www.scopus.com/pages/publications/79960525056

U2 - 10.1063/1.3608144

DO - 10.1063/1.3608144

M3 - 评论/辩论

AN - SCOPUS:79960525056

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 1

M1 - 019902

ER -