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Epitaxial growth of wafer-scale two-dimensional polytypic ZnS thin films on ZnO substrates

  • Lei Wang
  • , Kanglin Xiong
  • , Yangkun He
  • , Xing Huang
  • , Jing Xia
  • , Xuanze Li
  • , Yiyi Gu
  • , Huaqiu Cheng
  • , Xiangmin Meng*
  • *此作品的通讯作者
  • CAS - Technical Institute of Physics and Chemistry
  • University of Chinese Academy of Sciences
  • Yale University
  • Fritz Haber Institute of the Max Planck Society

科研成果: 期刊稿件文章同行评审

摘要

In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnOWZ//[2-1-10] ZnSWZ//[10-1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.

源语言英语
页(从-至)2294-2299
页数6
期刊CrystEngComm
19
17
DOI
出版状态已出版 - 2017

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