摘要
In this paper, we report the first successful epitaxial synthesis of flat wafer-scale two-dimensional ZnS thin films on single-crystalline ZnO substrates with high reproducibility, stability, and reliability, despite the large lattice mismatch (approximately 20%) between ZnO and ZnS. The as-grown ZnS was composed of two crystal phases: wurtzite (WZ) and zinc blende (ZB). The epitaxial orientation between the different phases was identified as: [2-1-10] ZnOWZ//[2-1-10] ZnSWZ//[10-1] ZnSZB and (0001) ZnOWZ//(0001) ZnSWZ//(111) ZnSZB. The crystal structure and the strain profile at the interfaces were studied in detail. After a simple etching treatment, exfoliated large-area free-standing ZnS thin films were achieved for the first time. The present product is expected to become valuable to the strategy of growing large-area thin films or heterostructures with a large lattice mismatch.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 2294-2299 |
| 页数 | 6 |
| 期刊 | CrystEngComm |
| 卷 | 19 |
| 期 | 17 |
| DOI | |
| 出版状态 | 已出版 - 2017 |
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