Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

Yuan Zhang; Paul W.M. Blom

doi:10.1063/1.3464560

Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

Yuan Zhang^*
, Paul W.M. Blom

^*此作品的通讯作者

University of Groningen
Holst Centre

科研成果: 期刊稿件 › 文章 › 同行评审

44 引用（Scopus）

摘要

The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p ₀, from 2× 1016 to 2× 10¹⁷ cm^-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p₀, which can be explained by doping induced surface charges.

源语言	英语
文章编号	083303
期刊	Applied Physics Letters
卷	97
期	8
DOI	https://doi.org/10.1063/1.3464560
出版状态	已出版 - 23 8月 2010
已对外发布	是

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title = "Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping",

abstract = "The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.",

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AU - Zhang, Yuan

AU - Blom, Paul W.M.

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N2 - The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.

AB - The hole injection in Schottky barriers formed between p -type doped regioregular poly(3-hexylthiophene-2,5-diyl) (rr-P3HT) and silver (Ag) is investigated. The rr-P3HT is controllably doped using the acceptor 2,3,5,6-Tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ). We demonstrate that only one order of magnitude increase in the background hole density p 0, from 2× 1016 to 2× 1017 cm-3, enhances the hole injection with two orders of magnitude. The hole injection barrier is lowered by 0.5 eV and exhibits a linear dependence on p0, which can be explained by doping induced surface charges.

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Enhancement of the hole injection into regioregular poly(3-hexylthiophene) by molecular doping

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