Enhanced photoresponsivity of the MoS 2-GaN heterojunction diode via the piezo-phototronic effect

Combining layered MoS 2 flakes with conventional 3D semiconductors is a feasible route to fabricate high-quality heterojunction devices by harnessing the advantages of both materials. Here, we present a pressure-modulated heterojunction photodiode that is composed of an n-Type multilayer MoS 2 and a p-Type GaN film via the piezo-phototronic effect. Under the illumination of 365 nm incident light, a strong photoresponse is observed with response and recovery times of ∼66 and 74 ms, respectively. Under a pressure of 258 MPa, the photoresponsivity of this photodiode can be tuned by the piezo-phototronic effect arising from the GaN film to ∼3.5 times. Because of the lowered junction barrier with an applied external pressure (strain), more photogenerated carriers can successfully pass through the junction area without recombination, which results in an enhancement effect. This work provides a possible path for the implementation of high-performance electronic and optoelectronic devices that are based on hybrid heterostructures via human interfacing.