@inproceedings{0710f8422de5464e80ae50d47829ec7e,
title = "Emerging Spintronic Devices: From Ultra-High-Density Memory to Logic-In-Memory",
abstract = "In the post-Moore era, integrated circuits based on complementary metal oxide semiconductor (CMOS) are faced with the energy bottleneck. Spintronics is recognized as one of the most promising technologies for overcoming this issue. Here we focus on two emerging spintronic devices, double-barrier double-free-layer magnetic tunnel junction (DDMTJ) and ring-shaped racetrack memory (RM), which can be used for building ultra-high-density non-volatile memories and logic-in-memory circuits. A systematic study has been carried out from device level to system level. Through increasing density and reducing data traffic distance, the performance and energy of the memory and logic applications can be improved significantly.",
keywords = "logic-in-memory, magnetic tunnel junction, racetrack memory, ultra-high-density memory",
author = "Yue Zhang and Guanda Wang and Zhe Huang and Zhizhong Zhang and Jinkai Wang and Youguang Zhang and Weisheng Zhao",
note = "Publisher Copyright: {\textcopyright} 2018 IEEE.; 1st IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018 ; Conference date: 21-11-2018 Through 23-11-2018",
year = "2018",
month = jul,
day = "2",
doi = "10.1109/CICTA.2018.8706056",
language = "英语",
series = "Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "67--68",
booktitle = "Proceedings of 2018 IEEE International Conference on Integrated Circuits, Technologies and Applications, ICTA 2018",
address = "美国",
}