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Electrically reversible cracks in an intermetallic film controlled by an electric field

  • Z. Q. Liu*
  • , J. H. Liu
  • , M. D. Biegalski
  • , J. M. Hu
  • , S. L. Shang
  • , Y. Ji
  • , J. M. Wang
  • , S. L. Hsu
  • , A. T. Wong
  • , M. J. Cordill
  • , B. Gludovatz
  • , C. Marker
  • , H. Yan
  • , Z. X. Feng
  • , L. You
  • , M. W. Lin
  • , T. Z. Ward
  • , Z. K. Liu
  • , C. B. Jiang
  • , L. Q. Chen
  • R. O. Ritchie, H. M. Christen, R. Ramesh
*此作品的通讯作者

科研成果: 期刊稿件文章同行评审

摘要

Cracks in solid-state materials are typically irreversible. Here we report electrically reversible opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric substrate driven by a small electric field (~0.83 kV/cm). Accordingly, a nonvolatile colossal electroresistance on-off ratio of more than 108 is measured across the cracks in the intermetallic film at room temperature. Cracks are easily formed with low-frequency voltage cycling and remain stable when the device is operated at high frequency, which offers intriguing potential for next-generation high-frequency memory applications. Moreover, endurance testing demonstrates that the opening and closing of such cracks can reach over 107 cycles under 10-μs pulses, without catastrophic failure of the film.

源语言英语
文章编号41
期刊Nature Communications
9
1
DOI
出版状态已出版 - 1 12月 2018

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