摘要
With the expanding power demands and increasing use of renewable energy resources, microgrids have been widely supported. The wide bandgap semiconductor devices with higher blocking voltage capabilities and higher switching speed such as silicon carbide (SiC) devices will become a critical component in building the microgrid. In this paper, the power loss and current harmonics of both Si-IGBT and SiC-MOSFET based inverters are investigated and compared in low voltage (LV) microgrid applications, respectively. And the experimental results show that the application of SiC devices greatly increases the energy efficiency and improves the power quality in microgrid.
| 源语言 | 英语 |
|---|---|
| 页(从-至) | 298-303 |
| 页数 | 6 |
| 期刊 | Energy Procedia |
| 卷 | 103 |
| DOI | |
| 出版状态 | 已出版 - 1 12月 2016 |
| 活动 | Applied Energy Symposium and Submit: Renewable Energy Integration with Mini/Microgrid, REM 2016 - Maldives, 马尔代夫 期限: 19 4月 2016 → 21 4月 2016 |
联合国可持续发展目标
此成果有助于实现下列可持续发展目标:
-
可持续发展目标 7 经济适用的清洁能源
学术指纹
探究 'Efficiency and Current Harmonics Comparison between SiC and Si Based Inverters for Microgrids' 的科研主题。它们共同构成独一无二的学术指纹。引用此
- APA
- Author
- BIBTEX
- Harvard
- Standard
- RIS
- Vancouver