Effects of dopant content on optical and electrical properties of In ₂O ₃: W transparent conductive films

The In ₂O ₃: W (IWO) films with different W content were deposited on glass substrate using direct current sputtering method. The structure, surface morphology, and optical and electrical properties were investigated. Results showed that both the carrier concentration and carrier mobility were increased with the doping of W. The IWO film with the lowest resistivity of 1.0×10 ^-3 Ω·cm, highest carrier mobility of 43.7 cm ²·V ^-1·s ^-1 and carrier concentration of 1.4×10 ²⁰ cm ^-3 was obtained at the content of 2.8 wt.%. The average optical transmittance from 300 nm to 900 nm reached 87.6%.